BYV32EB-200 /T3 NXP Semiconductors, BYV32EB-200 /T3 Datasheet - Page 5
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BYV32EB-200 /T3
Manufacturer Part Number
BYV32EB-200 /T3
Description
Rectifiers TAPE-7 REC-EPI
Manufacturer
NXP Semiconductors
Datasheet
1.BYV32EB-200_T3.pdf
(9 pages)
Specifications of BYV32EB-200 /T3
Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.15 V
Recovery Time
25 ns
Forward Continuous Current
20 A
Max Surge Current
137 A
Reverse Current Ir
30 uA
Mounting Style
SMD/SMT
Package / Case
D2-PAK
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
800
Part # Aliases
BYV32EB-200,118
NXP Semiconductors
BYV32EB-200_4
Product data sheet
Fig 4.
Fig 6.
I
I
R
F
(A)
I
F
32
24
16
8
0
voltage
Forward current as a function of forward
Reverse recovery definitions; step recovery
0
I
F
I
R
Q
0.4
r
t
rr
0.8
(1)
(2)
1.2
(3)
003aac981
V
F
(V)
1.6
Rev. 04 — 2 March 2009
0.25 x I
003aac563
time
R
Fig 5.
Fig 7.
V
I
I
R
I
F
F
F
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Reverse recovery definitions; ramp recovery
Forward recovery definitions
dl
dt
F
I
RM
Q
r
t
rr
BYV32EB-200
© NXP B.V. 2009. All rights reserved.
V
F
25 %
003aac562
001aab912
time
time
time
100 %
V
FRM
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