BSS83PH6327XT Infineon Technologies, BSS83PH6327XT Datasheet
首页 Semiconductor Modules MOSFETs BSS83PH6327XT
Manufacturer Part Number
BSS83PH6327XT
Description
MOSFET SIPMOS Small Signal Transistor
Manufacturer
Infineon Technologies
Specifications of BSS83PH6327XT
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 330 mA
Resistance Drain-source Rds (on)
2 Ohms at -4.5 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PG-SOT-23
Fall Time
64 ns
Gate Charge Qg
2.38 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
360 mW
Rise Time
71 ns
Typical Turn-off Delay Time
56 ns
Part # Aliases
BSS83P BSS83PH6327XTSA1 H6327
Rev. 1.5
SIPMOS
Features
·
·
·
·
·
Type
BSS 83 P
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ESD Class; JESD22-A114-HBM
D
S
Enhancement mode
P-Channel
Avalanche rated
Logic Level
d v /d t rated
Qualified according to AEC Q101
A
A
A
jmax
A
Halogen-free according to IEC61249-2-21
= -0.33 A, V
= -0.33 A , V
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 150 °C
Small-Signal-Transistor
DS
DD
= -48 V, d i /d t = 200 A/µs,
= -25 V, R
Package
PG-SOT-23
j
= 25 °C, unless otherwise specified
GS
= 25
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
H 6327: 3000pcs/r.
Tape and Reel
W
jmax
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
Marking
YAs
stg
Pin 1
-55...+150
55/150/56
Class 0
G
V
R
I
Value
0.036
-0.33
-0.27
-1.32
D
0.36
±
DS
9.5
DS(on)
20
6
3
PIN 2
S
2012-03-30
-0.33
BSS 83 P
-60
2
1
PIN 3
kV/µs
V
W
°C
Unit
A
mJ
VPS05161
D
V
W
A
2
Related parts for BSS83PH6327XT
BSS83PH6327XT Summary of contents
SIPMOS Small-Signal-Transistor Features · P-Channel · Enhancement mode · Avalanche rated · Logic Level · rated Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package BSS 83 P PG-SOT-23 Maximum Ratings, Parameter ...
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point ( Pin 3 ) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...
Electrical Characteristics Parameter Dynamic Characteristics Transconductance ³ DS(on)max D Input capacitance - MHz GS DS Output capacitance V = ...
Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge -0. Gate to drain charge -0. Gate charge total V = ...
Power Dissipation tot A BSS 83 P 0.38 W 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0. Safe operating area ...
Typ. output characteristic =25° parameter µs p BSS 83 P -0. tot -0.60 -0.50 ...
Drain-source on-state resistance DS(on) j parameter : I = -0. BSS 83 P 5.5 W 4.5 4.0 3.5 3.0 98% 2.5 2.0 typ 1.5 1.0 0.5 0.0 -60 - ...
Avalanche energy para -0. - 105 Drain-source ...
... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...
Related keywords
BSS83PH6327XT datasheet BSS83PH6327XT data sheet BSS83PH6327XT pdf datasheet BSS83PH6327XT component BSS83PH6327XT part BSS83PH6327XT distributor BSS83PH6327XT RoHS BSS83PH6327XT datasheet download