BSS83PH6327XT Infineon Technologies, BSS83PH6327XT Datasheet - Page 5

• Manufacturer Part Number: BSS83PH6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS83PH6327XT

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 330 mA
• Resistance Drain-source Rds (on): 2 Ohms at -4.5 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 64 ns
• Gate Charge Qg: 2.38 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 71 ns
• Typical Turn-off Delay Time: 56 ns
• Part # Aliases: BSS83P BSS83PH6327XTSA1 H6327

Power Dissipation
P
Safe operating area
I
parameter : D = 0 , T
Rev. 1.5
D
tot
= f ( V
-10
-10
-10
-10
-10
W
0.38
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
A
= f ( T
-1
-2
-3
1
0
-10
0
BSS 83 P
BSS 83 P
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
120
1
°C
DC
V
T
V
t p = 88.0µs
A
DS
160
100 µs
1 ms
10 ms
-10
Page 5
2
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter : D = t
D
thJC
K/W
= f ( T
-0.36
-0.28
-0.24
-0.20
-0.16
-0.12
-0.08
-0.04
10
0.00
10
10
10
10
A
-1
= f ( t
3
2
1
0
10
0
BSS 83 P
BSS 83 P
A
-5
)
10
20
p
single pulse
)
-4
GS
10
40
³
-3
p
10
10 V
/ T
60
-2
10
80
-1
10
100
0
10
1
120
2012-03-30
BSS 83 P
10
D = 0.50
2
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4