SIHP10N40D-E3 Vishay/Siliconix, SIHP10N40D-E3 Datasheet - Page 3

• Manufacturer Part Number: SIHP10N40D-E3
• Description: MOSFET 400V 600mOhm@10V 10A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHP10N40D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 600 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Power Dissipation: 147 W

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-0688-Rev. A, 02-Apr-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
25
20
15
10
25
20
15
10
16
12
0
5
0
0
5
8
4
0
0
0
BOTTOM 5 V
TOP
Fig. 3 - Typical Transfer Characteristics
BOTTOM
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
T
TOP
J
= 150 °C
V
15 V
14 V
13 V
12 V
11 V
11 V
10 V
V
www.vishay.com
5
9 V
8 V
7 V
6 V
DS
5
15 V
14 V
13 V
12 V
11 V
10 V
V
GS
9 V
8 V
7 V
6 V
5
DS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
, Drain-to-Source Voltage (V)
J
= 25 °C
10
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
T
J
= 25 °C
10
T
J
= 150 °C
15
15
15
20
20
5 V
For technical questions, contact:
20
25
25
30
25
30
3
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10 000
[e-mail]
1000
Fig. 4 - Normalized On-Resistance vs. Temperature
100
2.5
1.5
0.5
10
24
20
16
12
3
2
1
0
1
- 60 - 40 - 20 0
8
4
0
0
0
www.vishay.com/doc?91000
C
C
rss
I
iss
C
D
50
oss
= 5 A
V
DS
T
5
J
Q
, Drain-to-Source Voltage (V)
, Junction Temperature (°C)
100
g
, Total Gate Charge (nC)
20 40 60 80 100 120 140 160
150
10
V
C
C
C
GS
iss
rss
oss
200
= 0 V, f = 1 MHz
= C
= C
= C
gs
gd
ds
V
V
V
15
250
DS
DS
DS
V
+ C
+ C
GS
Vishay Siliconix
SiHP10N40D
= 400 V
= 250 V
= 100 V
Document Number: 91497
gd
= 10 V
gd
300
, C
ds
20
Shorted
350
400
25