SIHP10N40D-E3 Vishay/Siliconix, SIHP10N40D-E3 Datasheet - Page 4

• Manufacturer Part Number: SIHP10N40D-E3
• Description: MOSFET 400V 600mOhm@10V 10A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHP10N40D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 600 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Power Dissipation: 147 W

S12-0688-Rev. A, 02-Apr-12
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.01
100
100
0.1
0.1
10
10
1
1
0.2
1
* V
Fig. 8 - Maximum Safe Operating Area
Limited by R
T
T
Single Pulse
GS
C
J
0.01
Operation in this Area
Limited by R
0.1
= 150 °C
0.4
= 25 °C
> minimum V
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1
T
0.0001
V
V
J
SD
DS
= 150 °C
0.1
0.2
Duty Cycle = 0.5
, Source-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.6
DS(on)
Single Pulse
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
*
DS(on)
GS
0.8
0.05
at which R
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
BVDSS Limited
T
1
J
0.02
I
DM
= 25 °C
100
V
= Limited
DS(on)
GS
1.2
= 0 V
0.001
For technical questions, contact:
is specified
1.4
10 ms
100 μs
1 ms
1000
1.6
Pulse Time (s)
4
0.01
[e-mail]
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
12.0
10.0
500
475
450
425
400
375
350
8.0
6.0
4.0
2.0
0
- 60
25
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- 40 - 20
T
50
J
0.1
T
, Junction Temperature (°C)
J
, Case Temperature (°C)
0
20 40 60 80 100 120 140
75
100
Vishay Siliconix
SiHP10N40D
Document Number: 91497
125
1
150
160