SIHP10N40D-E3 Vishay/Siliconix, SIHP10N40D-E3 Datasheet - Page 7

• Manufacturer Part Number: SIHP10N40D-E3
• Description: MOSFET 400V 600mOhm@10V 10A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHP10N40D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 600 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Power Dissipation: 147 W

Revison: 08-Oct-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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For technical questions, contact:
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TO-220AB
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Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
• Xi’an and Mingxin actual photo
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
DIM.
[e-mail]
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www.vishay.com/doc?91000
14.85
10.04
13.35
MIN.
4.25
0.69
1.20
0.36
2.41
4.88
1.14
6.09
3.32
3.54
2.60
2.41
MILLIMETERS
Package Information
MAX.
15.49
10.51
14.02
4.65
1.01
1.73
0.61
2.67
5.28
1.40
6.48
2.92
3.82
3.94
3.00
Vishay Siliconix
Document Number: 71195
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
MIN.
INCHES
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118