BUZ73 H3046 Infineon Technologies, BUZ73 H3046 Datasheet - Page 5

• Manufacturer Part Number: BUZ73 H3046
• Description: MOSFET N-Channel 200V Transistor
• Manufacturer: Infineon Technologies

Specifications of BUZ73 H3046

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 0.4 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-262
• Fall Time: 30 nS
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 40 W
• Rise Time: 40 nS
• Typical Turn-off Delay Time: 55 nS
• Part # Aliases: BUZ73H3046XK BUZ73H3046XKSA1 SP000683002

Power dissipation
P
P
Safe operating area
I
parameter: D = 0.01 , T
Rev. 2.4
D
tot
I
tot
D
= ƒ ( V
= ƒ ( T
10
10
10
10
45
35
30
25
20
15
10
W
A
-1
5
0
2
1
0
DS
10
0
C
0
)
)
20
40
10
60
1
C
= 25˚C
80
100
10
DC
2
120
t
p = 22.0µs
100 µs
1 ms
10 ms
V
T
˚C
C
DS
V
160
Page 5
Z
Transient thermal impedance
Z
parameter: D = t
Drain current
I
parameter: V
thJC
D
th JC
I
D
= ƒ ( T
K/W
10
10
10
10
10
7.5
6.5
= ƒ ( t
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
-3
1
0
A
10
C
0
)
-7
p
)
20
single pulse
10
GS
-6
p
≥ 10 V
40
/ T
10
-5
60
10
-4
80
10
-3
100
10
120
-2
D = 0.50
2009-11-10
BUZ 73 H
10
t
0.20
0.10
0.05
0.02
0.01
p
T
˚C
-1
C
s
10
160
0