DMN2300U-7 Diodes Inc., DMN2300U-7 Datasheet - Page 2

• Manufacturer Part Number: DMN2300U-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMN2300U-7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.4 A
• Resistance Drain-source Rds (on): 175 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT23-3
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate Charge Qg: 1.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.43 W
• Rise Time: 2.8 ns
• Typical Turn-off Delay Time: 38 ns

Thermal Characteristics
Thermal Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 6)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
DMN2300U
Datasheet number: DS35309 Rev. 2 - 2
100
90
80
70
60
50
40
30
20
10
0.00001
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper
6. Device mounted on minimum recommended pad layout test board, 10
0
Fig. 1 Single Maximum Power Dissipation
T1, PULSE DURATION SECTION (sec)
0.001
Characteristic
Characteristic
@T
Steady
State
A
= 25°C unless otherwise specified
0.1
@T
A
T
T
T
= 25°C unless otherwise specified
A
A
A
Single Pulse
Rthja = 220C/W
Rthja(t) = Rthja*r(t)
T - T = P*Rthja (t)
= 25°C (Note 5)
= 85°C (Note 5)
= 25°C (Note 4)
(Note 4)
(Note 5)
(Note 4)
(Note 5)
J
10
A
1000
www.diodes.com
2 of 7
μ
s pulse duty cycle = 1%.
Symbol
Symbol
T
J
V
V
R
,
I
P
DSS
GSS
I
DM
T
θJA
D
D
STG
0.001
0.01
100
0.1
10
1
0.01
T
T = 25°C
Single Pulse
J(MAX)
A
Diodes Incorporated
= 150°C
I (A) @
P
V , DRAIN-SOURCE VOLTAGE
D
Fig. 2 SOA, Safe Operation Area
W
A Product Line of
0.1
DS
-55 to +150
= 10ms
I (A) @ DC
Value
Value
D
1.40
1.01
1.24
0.43
0.55
288
228
20
±8
11
I (A) @
P
D
W
I (A) @
P
D
W
= 10s
= 1ms
1
I (A) @
P
D
W
= 1s
I (A) @
P
D
W
= 100ms
DMN2300U
10
I (A) @
P
© Diodes Incorporated
D
°C/W
°C/W
W
Unit
Unit
I (A) @
P
°C
W
W
= 100µs
D
V
V
A
A
W
= 10µs
July 2011
100