DMN2300U-7 Diodes Inc., DMN2300U-7 Datasheet - Page 5

• Manufacturer Part Number: DMN2300U-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMN2300U-7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.4 A
• Resistance Drain-source Rds (on): 175 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT23-3
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate Charge Qg: 1.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.43 W
• Rise Time: 2.8 ns
• Typical Turn-off Delay Time: 38 ns

DMN2300U
Datasheet number: DS35309 Rev. 2 - 2
1,000
1.2
1.0
0.8
0.6
0.4
0.2
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
100
0
-50 -25
10
8
6
4
2
0
0
1
2
4
0.5
T , AMBIENT TEMPERATURE (°C)
Fig. 14 Gate-Charge Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
A
Q , TOTAL GATE CHARGE (nC)
DS
g
Fig. 12 Typical Leakage Current
0
6
I = 250µA
vs. Drain-Source Voltage
D
1
25
8
T = 125°C
T = 85°C
A
T = 25°C
T = -55°C
A
10
V
A
A
I = 1mA
50
DS
I = 1A
1.5
D
D
= 15V
12
75
2
14
100
16
2.5
125 150
18
3
20
www.diodes.com
5 of 7
100,000
10,000
1,000
2.0
1.6
1.2
0.8
0.4
100
0
10
0
1
2
Fig.13 Leakage Current vs. Gate-Source Voltage
Fig. 11 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
0.2
SD
Diodes Incorporated
V
GS
4
A Product Line of
, GATE-SOURCE VOLTAGE (V)
0.4
T = 125°C
A
6
0.6
T = 25°C
A
T = 85°C
A
T = 25°C
8
T = -55°C
0.8
T = 150°C
A
A
A
DMN2300U
1.0
10
© Diodes Incorporated
1.2
July 2011
12