DMN2300U-7 Diodes Inc., DMN2300U-7 Datasheet - Page 3

• Manufacturer Part Number: DMN2300U-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMN2300U-7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.4 A
• Resistance Drain-source Rds (on): 175 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT23-3
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate Charge Qg: 1.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.43 W
• Rise Time: 2.8 ns
• Typical Turn-off Delay Time: 38 ns

Electrical Characteristics
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMN2300U
Datasheet number: DS35309 Rev. 2 - 2
7. Short duration pulse test used to minimize self-heating effect.
0.001
0.01
Characteristic
0.1
0.00001
1
r(t) @ D=0.01
r(t) @ D=0.3
r(t) @ D=0.05
r(t) @ D=0.1
r(t) @ D=Single Pulse
r(t) @ D=0.5
J
0.0001
= 25°C
r(t) @ D=0.005
@T
A
= 25°C unless otherwise specified
r(t) @ D=0.01
0.001
0.01
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
r(t) @ D=0.7
Fig. 3 Transient Thermal Resistance
oss
t
t
SD
rss
DSS
iss
gs
gd
r
t1, PULSE DURATION TIME (sec)
fs
f
g
g
|
3 of 7
0.45
0.1
Min
20
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
r(t) @ D=0.9
64.3
Typ
0.7
6.1
4.5
1.6
0.2
0.2
3.5
2.8
70
38
13
-
-
-
-
-
1
Max
0.95
175
240
360
1.2
10
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated
A Product Line of
10
Unit
mΩ
mS
nC
nC
nC
μA
μA
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
V
R
R
Duty Cycle, D = t1/t2
θ
θ
JA
JA
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
V
(t) = r(t)*R
= 220C/W
100
D
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DS
GS
DS
GS
= 1A
= 0V, I
= 20V, V
= ±8V, V
= V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 3V, I
= 0V, I
= 25V, V
= 0V, V
= 4.5V, V
= 10V, I
= 10V, R
θ
GS
Test Condition
JA
, I
D
D
S
GS
D
D
DMN2300U
1000
= 30mA
= 300mA
= 10μA
D
D
D
GS
DS
GS
G
DS
= 250μA
= 1A
= 300mA
= 250mA
= 100mA
= 0V, f = 1MHz
= 6Ω
= 0V
= 0V
= 0V,
© Diodes Incorporated
= 15V,
July 2011