NVF6P02T3G ON Semiconductor, NVF6P02T3G Datasheet - Page 3

• Manufacturer Part Number: NVF6P02T3G
• Description: MOSFET POWER MOSFET
• Manufacturer: ON Semiconductor

Specifications of NVF6P02T3G

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 25 V
• Continuous Drain Current: - 10 A
• Resistance Drain-source Rds (on): 44 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 60 ns
• Gate Charge Qg: 1.7 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 8.3 W
• Rise Time: 30 ns
• Typical Turn-off Delay Time: 60 ns

−5.0 V
−7.0 V
−10 V
0.15
0.05
12
0.2
0.1
9
6
3
0
1.6
1.4
1.2
1.0
0.8
0.6
0
0
−50
0
−V
1
−V
I
V
D
Figure 5. On−Resistance Variation with
−2.2 V
GS
DS,
−25
Figure 1. On−Region Characteristics
−4.4 V
= −6.0 A
GS,
−3.2 V
−2.4 V
= −4.5 V
Figure 3. On−Resistance versus
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
2
GATE−TO−SOURCE VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
Gate−to−Source Voltage
0
3
2
Temperature
4
25
V
5
3
50
GS
−1.6 V
−1.4 V
−1.8 V
−2.0 V
TYPICAL ELECTRICAL CHARACTERISTICS
= −1.2 V
6
75
4
7
100
T
I
T
D
J
8
J
= −6.0 A
= 25°C
= 25°C
5
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125
9
10
150
6
3
10,000
1000
0.08
0.07
0.06
0.05
0.04
0.03
0.02
100
12
10
4
0
8
6
2
2
0
2
Figure 4. On−Resistance versus Drain Current
T
Figure 6. Drain−to−Source Leakage Current
V
J
V
−V
DS
−V
= 25°C
GS
4
T
DS,
≥ −10 V
0.5
GS,
J
Figure 2. Transfer Characteristics
= 0 V
4
= 25°C
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GATE−TO−SOURCE VOLTAGE (VOLTS)
6
−I
D,
T
J
DRAIN CURRENT (AMPS)
and Gate Voltage
= −55°C
8
1
6
versus Voltage
V
V
T
T
GS
GS
10
J
J
= 100°C
= 150°C
= −4.5 V
= −2.5 V
1.5
T
8
J
12
= 100°C
14
10
2
16
2.5
12
18
20
14
3