NVF6P02T3G ON Semiconductor, NVF6P02T3G Datasheet - Page 4

• Manufacturer Part Number: NVF6P02T3G
• Description: MOSFET POWER MOSFET
• Manufacturer: ON Semiconductor

Specifications of NVF6P02T3G

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 25 V
• Continuous Drain Current: - 10 A
• Resistance Drain-source Rds (on): 44 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 60 ns
• Gate Charge Qg: 1.7 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 8.3 W
• Rise Time: 30 ns
• Typical Turn-off Delay Time: 60 ns

3000
2400
1800
1200
1000
600
100
10
0
1
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
1
V
I
V
C
C
Figure 9. Resistive Switching Time Variation
D
DD
GS
iss
rss
= −3.0 A
= −4.5 V
= −16 V
V
5
DS
Figure 7. Capacitance Variation
−V
= 0 V
R
GS
versus Gate Resistance
G
, GATE RESISTANCE (W)
0
V
−V
GS
DS
= 0 V
(VOLTS)
10
5
TYPICAL ELECTRICAL CHARACTERISTICS
C
C
C
t
t
d(off)
d(on)
t
oss
rss
t
iss
f
r
10
T
J
15
= 25°C
http://onsemi.com
100
20
4
5
4
3
2
1
0
0
7
6
5
4
3
2
1
0
−V
Q
Figure 10. Diode Forward Voltage versus Current
0.3
gs
DS
Drain−to−Source Voltage versus Total Charge
V
T
−V
J
GS
SD
= 25°C
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
4
Figure 8. Gate−to−Source and
Q
Q
gd
g
, TOTAL GATE CHARGE (nC)
0.6
Q
8
T
0.9
I
T
12
D
J
= −6.0 A
= 25°C
−V
GS
16
20
16
12
8
4
0
1.2