NVF6P02T3G ON Semiconductor, NVF6P02T3G Datasheet - Page 5

• Manufacturer Part Number: NVF6P02T3G
• Description: MOSFET POWER MOSFET
• Manufacturer: ON Semiconductor

Specifications of NVF6P02T3G

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 25 V
• Continuous Drain Current: - 10 A
• Resistance Drain-source Rds (on): 44 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 60 ns
• Gate Charge Qg: 1.7 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 8.3 W
• Rise Time: 30 ns
• Typical Turn-off Delay Time: 60 ns

0.01
0.1
1.0E-03
1
SINGLE PULSE
D = 0.5
0.1
0.05
0.02
0.2
0.01
1.0E-02
TYPICAL ELECTRICAL CHARACTERISTICS
1.0E-01
Figure 11. FET Thermal Response
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CHIP
JUNCTION
t, TIME (s)
5
1.0E+00
NORMALIZED TO R
0.0154 F
0.0175 W
0.0854 F
0.0710 W
1.0E+01
qJA
0.3074 F
0.2706 W
AT STEADY STATE (1″ PAD)
0.5779 W
1.7891 F
1.0E+02
0.7086 W
107.55 F
AMBIENT
1.0E+03