BUK7631-100E,118 NXP Semiconductors, BUK7631-100E,118 Datasheet

no-image

BUK7631-100E,118

Manufacturer Part Number
BUK7631-100E,118
Description
MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7631-100E118.pdf (13 pages)

Specifications of BUK7631-100E,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
34 A
Resistance Drain-source Rds (on)
84 mOhms
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
20 ns
Gate Charge Qg
29.4 nC
Power Dissipation
96 W
Rise Time
18.2 ns
Typical Turn-off Delay Time
22.1 ns
Scan or click this QR code to view the latest information for this product
1. Product profile
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
•
•
•
•
•
•
•
•
•
BUK7631-100E
N-channel TrenchMOS standard level FET
5 October 2012
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
Conditions
T
V
T
V
Fig. 11
V
T
j
mb
j
GS
GS
GS
≥ 25 °C; T
= 25 °C;
= 25 °C;
= 10 V; T
= 10 V; I
= 10 V; I
Fig.
j
D
D
Fig. 2
≤ 175 °C
mb
= 10 A; T
= 10 A; V
13;
= 25 °C;
Fig. 14
j
DS
= 25 °C;
Fig. 1
= 80 V;
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
24.3
10.7
Max
100
34
96
31
-
Unit
V
A
W
mΩ
nC

Related parts for BUK7631-100E,118

Image
Part Number
Description
Manufacturer
Datasheet
Request R
LPC2420_60
Part Number:
LPC2420_60
Description:
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2420_60.pdf (86 pages)
LPC2458
Part Number:
LPC2458
Description:
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2458.pdf (80 pages)
LPC2468
Part Number:
LPC2468
Description:
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2468.pdf (85 pages)
LPC2470
Part Number:
LPC2470
Description:
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2470.pdf (91 pages)
LPC2478
Part Number:
LPC2478
Description:
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2478.pdf (93 pages)
XA-G30
Part Number:
XA-G30
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G30.pdf (36 pages)
XA-G37
Part Number:
XA-G37
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G37.pdf (37 pages)
XA-S3
Part Number:
XA-S3
Description:
The XA-S3 device is a member of Philips Semiconductors? XA(eXtended Architecture) family of high performance 16-bitsingle-chip microcontrollers
Manufacturer:
NXP Semiconductors
Datasheet:
XA-S3.pdf (52 pages)
LH75401_LH75411_N
Part Number:
LH75401_LH75411_N
Description:
The NXP BlueStreak LH75401/LH75411 family consists of two low-cost 16/32-bit System-on-Chip (SoC) devices
Manufacturer:
NXP Semiconductors
Datasheet:
LH75401_LH75411_N.pdf (63 pages)
LPC3130_3131
Part Number:
LPC3130_3131
Description:
The NXP LPC3130/3131 combine an 180 MHz ARM926EJ-S CPU core, high-speed USB2
Manufacturer:
NXP Semiconductors
Datasheet:
LPC3130_3131.pdf (68 pages)
LPC3141FET180
Part Number:
LPC3141FET180
Description:
The NXP LPC3141 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3143FET180
Part Number:
LPC3143FET180
Description:
The NXP LPC3143 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3152FET208
Part Number:
LPC3152FET208
Description:
The NXP LPC3152 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3154FET208
Part Number:
LPC3154FET208
Description:
The NXP LPC3154 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
BUK714R1-40BT
Part Number:
BUK714R1-40BT
Description:
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer:
NXP Semiconductors
Datasheet:
BUK714R1-40BT.pdf (13 pages)

BUK7631-100E,118 Summary of contents

Page 1

... BUK7631-100E N-channel TrenchMOS standard level FET 5 October 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • ...

Page 2

... 100 ° °C; pulsed; t ≤ 10 µ °C; Fig All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E Graphic symbol mbb076 Version SOT404 Min Max - 100 - 100 -20 20 Fig Fig ...

Page 3

... T ( ° Fig. 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E N-channel TrenchMOS standard level FET Min - = 25 ° Ω; - [1][ 100 150 T © NXP B.V. 2012. All rights reserved ...

Page 4

... DC 10 Conditions Fig. 5 minimum footprint ; mounted on a printed-circuit board All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E N-channel TrenchMOS standard level FET 003aah676 (1) (2) ( (ms =10 µ 100 µ ...

Page 5

... 175 ° Fig. 11; Fig °C; Fig. 13; Fig All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E 003aah168 δ (s) p Min Typ Max 100 - - ...

Page 6

... /dt = -100 A/µ 003aah679 5 (V) DS Fig. 7. All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E N-channel TrenchMOS standard level FET Min Typ - 1303 - 145 - 105 = 8.4 - 18 2.5 - 7.5 Fig 0. ...

Page 7

... GS Fig. 9. 003aah028 R DSon (m Ω ) max (V) GS Fig. 11. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E N-channel TrenchMOS standard level FET 5 max 4 typ 3 2 min 120 Gate-source threshold voltage as a function of ...

Page 8

... T ( ° Fig. 13. Gate-source voltage as a function of gate Q GD 003aaa508 Fig. 15. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E N-channel TrenchMOS standard level FET charge ...

Page 9

... Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK7631-100E Product data sheet 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E N-channel TrenchMOS standard level FET 003aah689 ° 0.9 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...

Page 10

... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E N-channel TrenchMOS standard level FET mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...

Page 11

... NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E © NXP B.V. 2012. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BUK7631-100E Product data sheet N-channel TrenchMOS standard level FET All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E © NXP B.V. 2012. All rights reserved ...

Page 13

... For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 October 2012 BUK7631-100E Product data sheet N-channel TrenchMOS standard level FET All information provided in this document is subject to legal disclaimers. 5 October 2012 BUK7631-100E © NXP B.V. 2012. All rights reserved ...

Related keywords