BUK7631-100E,118 NXP Semiconductors, BUK7631-100E,118 Datasheet - Page 13
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BUK7631-100E,118
Manufacturer Part Number
BUK7631-100E,118
Description
MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7631-100E118.pdf
(13 pages)
Specifications of BUK7631-100E,118
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
34 A
Resistance Drain-source Rds (on)
84 mOhms
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
20 ns
Gate Charge Qg
29.4 nC
Power Dissipation
96 W
Rise Time
18.2 ns
Typical Turn-off Delay Time
22.1 ns
NXP Semiconductors
10. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 October 2012
BUK7631-100E
Product data sheet
Product profile ....................................................... 1
Pinning information ............................................... 2
Ordering information ............................................. 2
Marking ................................................................... 2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics ....................................................... 5
Package outline ................................................... 10
Legal information .................................................11
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
All information provided in this document is subject to legal disclaimers.
5 October 2012
N-channel TrenchMOS standard level FET
BUK7631-100E
© NXP B.V. 2012. All rights reserved
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