BUK7631-100E,118 NXP Semiconductors, BUK7631-100E,118 Datasheet - Page 13

• Manufacturer Part Number: BUK7631-100E,118
• Description: MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7631-100E,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 34 A
• Resistance Drain-source Rds (on): 84 mOhms
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 20 ns
• Gate Charge Qg: 29.4 nC
• Power Dissipation: 96 W
• Rise Time: 18.2 ns
• Typical Turn-off Delay Time: 22.1 ns

NXP Semiconductors
10. Contents
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© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Date of release: 5 October 2012
BUK7631-100E
Product data sheet
Product profile ....................................................... 1
Pinning information ............................................... 2
Ordering information ............................................. 2
Marking ................................................................... 2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics ....................................................... 5
Package outline ................................................... 10
Legal information .................................................11
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
All information provided in this document is subject to legal disclaimers.
5 October 2012
N-channel TrenchMOS standard level FET
BUK7631-100E
© NXP B.V. 2012. All rights reserved
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