STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 4

• Manufacturer Part Number: STI34N65M5
• Description: MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
• Manufacturer: STMicroelectronics

Specifications of STI34N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: IPAK
• Fall Time: 7.5 ns
• Gate Charge Qg: 62.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 8.7 ns

Electrical ratings
4/25
Table 4.
Symbol
E
I
AR
AS
Avalanche current, repetetive or not repetetive
(pulse width limited by T
Single pulse avalanche energy (starting t
I
d
= I
Avalanche characteristics
STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
AR
; V
dd
=50)
Parameter
Doc ID 022853 Rev 2
jmax
)
j
=25°C,
Value
510
7
Unit
mJ
A