STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 9

• Manufacturer Part Number: STI34N65M5
• Description: MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
• Manufacturer: STMicroelectronics

Specifications of STI34N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: IPAK
• Fall Time: 7.5 ns
• Gate Charge Qg: 62.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 8.7 ns

STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Figure 12. Capacitance variations
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
(norm)
V
1000
1000
GS(th)
1.00
0.80
0.70
1.10
0.90
100
(pF)
(V)
V
0.6
0.4
0.2
0.8
10
1.2
1.0
C
SD
-50
1
0
0.1
0
vs temperature
characteristics
T
-25
J
=150°C
10
T
0
1
J
=-50°C
20
25
10
50
30
V
I
D
75
DS
= 250 µA
40
T
= V
100
100
J
=25°C
GS
50
T
V
J
I
(°C)
Doc ID 022853 Rev 2
SD
DS
AM15323v1
AM05461v1
AM05459v1
(A)
(V)
Coss
Crss
Ciss
Figure 13. Output capacitance stored energy
Figure 15. Normalized on-resistance vs
Figure 17. Normalized B
(norm)
R
DS(on)
(norm)
E
0.98
0.96
0.92
1.08
1.06
1.04
1.02
0.94
(µJ)
1.00
V
oss
1.9
1.7
1.5
1.3
0.9
0.7
0.5
2.1
1.1
12
DS
10
2
8
6
4
0
-50
-50
0
temperature
-25
-25
100
0
0
200 300
I
D
25
25
= 1mA
V
I
D
GS
= 14 A
VDSS
50
50
= 10 V
Electrical characteristics
400
75
75
vs temperature
500 600
100
100
T
T
J
J
(°C)
(°C)
AM15324v1
AM05460v1
AM10399v1
V
DS
(V)
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