STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 7

• Manufacturer Part Number: STI34N65M5
• Description: MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
• Manufacturer: STMicroelectronics

Specifications of STI34N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: IPAK
• Fall Time: 7.5 ns
• Gate Charge Qg: 62.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 8.7 ns

STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
2.1
Figure 2.
Figure 4.
0.01
100
100
0.1
0.1
10
10
(A)
(A)
I
I
1
D
1
D
0.1
0.1
Electrical characteristics (curves)
Safe operating area for D
I
Safe operating area for TO-220FP
and I
2
PAK and TO-220
1
1
2
PAKFP
10
10
Tj=150°C
Tc=25°C
Tj=150°C
Tc=25°C
Single
pulse
Single
pulse
100
100
V
V
2
DS
DS
PAK,
(V)
(V)
Doc ID 022853 Rev 2
100µs
100µs
AM15311v1
10µs
1ms
10ms
AM15317v1
10µs
1ms
10ms
Figure 3.
Figure 5.
I
and I
Thermal impedance for D
Thermal impedance for TO-220FP
2
PAK and TO-220
2
PAKFP
Electrical characteristics
2
PAK,
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