FDPC8012S Fairchild Semiconductor, FDPC8012S Datasheet - Page 2

• Manufacturer Part Number: FDPC8012S
• Description: MOSFET 25V Asymmetric Dual N-Channel Pwr Trench
• Manufacturer: Fairchild Semiconductor

Specifications of FDPC8012S

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Dual Asymmetric
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerClip 33
• Fall Time: 3 ns
• Forward Transconductance Gfs (max / Min): 200 S
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 3 ns
• Typical Turn-off Delay Time: 34 ns

FDPC8012S Rev.C
©2012 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
g
ΔT
ΔT
g
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current,
Forward
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
I
I
V
V
V
V
V
V
I
I
V
V
V
V
V
V
Q1:
V
Q2:
V
Q1:
V
Q2:
V
V
D
D
D
D
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
DD
GS
= 250 μA, V
= 1 mA, V
= 250 μA, referenced to 25 °C
= 10 mA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 10 mA, referenced to 25 °C
= 20 V, V
= 20 V, V
= 5 V, I
= 5 V, I
= 13 V, V
= 13 V, V
= 0 V to 4.5 V Q1
= 12 V/-8 V, V
= 12 V/-8 V, V
= V
= V
= 4.5 V, I
= 4.5 V, I
= 4.5 V, I
= 4.5 V, I
= 13 V, I
= 13 V, I
DS
DS
Test Conditions
2
, I
, I
D
D
GS
D
D
D
D
GS
GS
GS
GS
D
D
D
D
= 13 A
= 26 A
GS
= 13 A, R
= 26 A, R
= 250 μA
= 1 mA
= 0 V
= 12 A
= 12 A,T
= 23 A
= 23 A ,T
= 0 V, f = 1 MHZ
= 0 V, f = 1 MHZ
= 0 V
= 0 V
= 0 V
DS
DS
V
I
Q2
V
I
D
D
= 0 V
= 0 V
DD
DD
= 13 A
= 26 A
GEN
GEN
J
= 13 V,
= 13 V,
J
=125 °C
=125 °C
= 6 Ω
= 6 Ω
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min
0.8
1.1
25
25
0.1
0.1
1075
3456
Typ
200
1.3
1.6
5.2
7.5
1.6
2.3
250
885
130
18
22
79
0.4
0.5
-4
-4
50
2.3
7.8
2.0
6.4
12
19
34
25
6
2
3
2
3
8
www.fairchildsemi.com
±100
±100
10.5
Max
500
2.2
2.2
7.0
2.2
3.2
2.0
2.0
1
mV/°C
mV/°C
Units
mΩ
μA
μA
nA
nA
pF
pF
pF
V
V
S
Ω
nC
nC
nC
ns
ns
ns
ns