FDPC8012S Fairchild Semiconductor, FDPC8012S Datasheet - Page 7

• Manufacturer Part Number: FDPC8012S
• Description: MOSFET 25V Asymmetric Dual N-Channel Pwr Trench
• Manufacturer: Fairchild Semiconductor

Specifications of FDPC8012S

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Dual Asymmetric
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerClip 33
• Fall Time: 3 ns
• Forward Transconductance Gfs (max / Min): 200 S
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 3 ns
• Typical Turn-off Delay Time: 34 ns

FDPC8012S Rev.C
©2012 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
120
90
60
30
1.6
1.4
1.2
1.0
0.8
0.6
120
100
0
80
60
40
20
0.0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
-75
0
1.0
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
-50
DS
GS
= 26 A
vs Junction Temperature
= 5 V
= 10 V
V
T
DS
1.5
-25
V
J
0.2
,
GS
,
JUNCTION TEMPERATURE
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
V
V
0
GS
GS
T
V
J
GS
= 3 V
= 10 V
2.0
= 125
V
25
= 3.5 V
GS
0.4
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
μ
= 4 V
s
o
V
C
50
GS
= 4.5 V
2.5
75
T
J
T
0.6
= -55
J
(
= 25
100 125 150
o
C
3.0
)
o
o
C
C
μ
s
0.8
3.5
T
7
J
= 25 °C unless otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
200
100
0.1
10
1
5
4
3
2
1
0
8
6
4
2
0
0.0
Figure 17. On-Resistance vs Gate to
0
Forward Voltage vs Source Current
2
Figure 19. Source to Drain Diode
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
= 0 V
Current and Gate Voltage
SD
3
, BODY DIODE FORWARD VOLTAGE (V)
0.2
T
V
J
GS
= 125
I
30
D
Source Voltage
4
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
T
V
J
GS
I
o
= 25
D
C
= 26 A
0.4
= 4 V
T
5
J
o
= -55
C
μ
60
T
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
J
o
V
= 25
T
C
GS
J
0.6
= 125
= 4.5 V
o
7
C
V
o
GS
C
90
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8
= 3 V
0.8
V
V
GS
GS
= 3.5 V
= 10 V
9
μ
s
1.0
120
10