FDPC8012S Fairchild Semiconductor, FDPC8012S Datasheet - Page 4

• Manufacturer Part Number: FDPC8012S
• Description: MOSFET 25V Asymmetric Dual N-Channel Pwr Trench
• Manufacturer: Fairchild Semiconductor

Specifications of FDPC8012S

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Dual Asymmetric
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerClip 33
• Fall Time: 3 ns
• Forward Transconductance Gfs (max / Min): 200 S
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 3 ns
• Typical Turn-off Delay Time: 34 ns

FDPC8012S Rev.C
©2012 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
40
32
24
16
40
32
24
16
1.6
1.4
1.2
1.0
0.8
0.6
8
0
Figure 3. Normalized On Resistance
8
0
Figure 1.
0.0
0
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
D
-50
GS
vs Junction Temperature
= 5 V
= 13 A
= 10 V
V
0.2
V
GS
T
DS
-25
J
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
1
,
,
JUNCTION TEMPERATURE
V
DRAIN TO SOURCE VOLTAGE (V)
GS
T
V
J
GS
= 3 V
0
V
= 150
GS
0.4
= 3.5 V
V
GS
= 4.5 V
25
μ
o
s
= 10 V
C
2
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
0.6
T
J
T
V
J
= -55
GS
75
= 25
= 2.5 V
3
o
(
o
C
100 125 150
o
C
0.8
C
)
μ
s
1.0
4
T
4
J
= 25°C unless otherwise noted
0.001
0.01
100
0.1
10
30
25
20
15
10
1
5
0
0.0
5
4
3
2
1
0
Figure 2.
Figure 4.
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
= 0 V
T
SD
0.2
J
, BODY DIODE FORWARD VOLTAGE (V)
= 150
V
Normalized On-Resistance
8
GS
On-Resistance vs Gate to
I
V
D
Source Voltage
4
,
Source to Drain Diode
,
GS
GATE TO SOURCE VOLTAGE (V)
o
DRAIN CURRENT (A)
C
0.4
V
I
= 3.5 V
D
GS
= 13 A
= 2.5 V
16
0.6
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
J
V
= 25
GS
24
V
0.8
T
= 4.5 V
GS
J
o
C
= -55
T
= 3 V
J
= 25
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8
T
o
32
1.0
J
C
V
o
= 125
GS
C
= 10 V
μ
μ
o
s
C
s
1.2
10
40