IXFN210N30P3 Ixys, IXFN210N30P3 Datasheet - Page 3

• Manufacturer Part Number: IXFN210N30P3
• Description: MOSFET N-Channel
• Manufacturer: Ixys

Specifications of IXFN210N30P3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 192 A
• Resistance Drain-source Rds (on): 14.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-227B
• Fall Time: 13 ns
• Gate Charge Qg: 268 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 kW
• Rise Time: 25 ns
• Typical Turn-off Delay Time: 94 ns

© 2012 IXYS CORPORATION, All Rights Reserved
200
160
120
200
160
120
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
40
80
40
0
0
0
0
0
V
GS
Fig. 5. R
= 10V
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
1
50
DS(on)
2
1
100
Normalized to I
Drain Current
1.5
I
3
V
D
V
DS
DS
- Amperes
150
- Volts
- Volts
V
2
4
V
GS
GS
D
= 10V
= 10V
= 105A Value vs.
8V
7V
200
8V
2.5
5
J
T
J
J
= 125ºC
= 25ºC
= 125ºC
6V
5V
T
7V
6V
4V
5V
J
250
= 25ºC
3
6
3.5
300
7
300
250
200
150
100
200
180
160
140
120
100
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
50
80
60
40
20
0
0
-50
-50
0
V
V
Fig. 2. Extended Output Characteristics @ T
GS
GS
Fig. 4. R
= 10V
= 10V
-25
-25
8V
Fig. 6. Maximum Drain Current vs.
DS(on)
5
0
0
7V
6V
5V
Junction Temperature
T
Normalized to I
Case Temperature
T
C
25
J
25
- Degrees Centigrade
- Degrees Centigrade
V
IXFN210N30P3
DS
10
50
50
- Volts
D
I
75
75
D
= 105A Value vs.
= 210A
100
100
15
I
D
J
= 105A
= 25ºC
125
125
150
150
20