IXFN210N30P3 Ixys, IXFN210N30P3 Datasheet - Page 4

• Manufacturer Part Number: IXFN210N30P3
• Description: MOSFET N-Channel
• Manufacturer: Ixys

Specifications of IXFN210N30P3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 192 A
• Resistance Drain-source Rds (on): 14.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-227B
• Fall Time: 13 ns
• Gate Charge Qg: 268 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 kW
• Rise Time: 25 ns
• Typical Turn-off Delay Time: 94 ns

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
300
250
200
150
100
100
80
60
40
20
50
10
0
0
3.0
0.3
0
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
f
= 1 MHz
0.5
4.0
10
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
T
15
J
0.7
= 125ºC
T
V
V
V
J
SD
DS
GS
= 125ºC
5.0
0.8
- Volts
20
- Volts
- Volts
0.9
T
5.5
25
J
25ºC
= 25ºC
C iss
C oss
C rss
1.0
6.0
30
1.1
- 40ºC
6.5
35
1.2
1.3
7.0
40
1000
100
0.1
10
200
160
120
10
1
80
40
9
8
7
6
5
4
3
2
1
0
0
1
0
0
T
T
Single Pulse
V
I
I
J
C
20
D
G
DS
= 150ºC
30
= 25ºC
= 105A
= 10mA
R
Fig. 12. Forward-Bias Safe Operating Area
= 150V
DS(on)
40
Limit
60
60
Fig. 8. Transconductance
10
90
Fig. 10. Gate Charge
80
Q
G
- NanoCoulombs
V
I
120
D
100
DS
IXFN210N30P3
- Amperes
- Volts
120
150
T
J
= - 40ºC
140
100
180
25ºC
125ºC
160
210
180
25µs
100µs
1ms
10ms
100ms
DC
240
200
1,000
270
220