IXFN210N30P3 Ixys, IXFN210N30P3 Datasheet - Page 5

• Manufacturer Part Number: IXFN210N30P3
• Description: MOSFET N-Channel
• Manufacturer: Ixys

Specifications of IXFN210N30P3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 192 A
• Resistance Drain-source Rds (on): 14.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-227B
• Fall Time: 13 ns
• Gate Charge Qg: 268 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 kW
• Rise Time: 25 ns
• Typical Turn-off Delay Time: 94 ns

IXFN210N30P3
Fig. 13. Maximum Transient Thermal Impedance
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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IXYS REF: F_210N30P3(K9) 6-22-12