VS-FA38SA50LCP Vishay Semiconductors, VS-FA38SA50LCP Datasheet

VS-FA38SA50LCP

Manufacturer Part Number

VS-FA38SA50LCP

Description

MOSFET N-Chan 500V 38 Amp

Manufacturer

Vishay Semiconductors

Datasheet

1.VS-FA38SA50LCP.pdf (9 pages)

Specifications of VS-FA38SA50LCP

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

38 A

Resistance Drain-source Rds (on)

0.13 Ohms

Configuration

Single Dual Source

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-227

Fall Time

330 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

500 W

Rise Time

340 ns

Factory Pack Quantity

180

Typical Turn-off Delay Time

200 ns

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Notes

(1)

(2)

(3)

Document Number: 94547

Revision: 11-May-10

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Continuous drain current at V

Pulsed drain current

Power dissipation

Linear derating factor

Gate to source voltage

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Peak diode recovery dV/dt

Operating junction and storage temperature range

Insulation withstand voltage (AC-RMS)

Mounting torque

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

Starting T

38 A, dI/dt

Package

Type

= 25 °C, L = 0.80 mH, R

DS(on)

DSS

410 A/μs, V

DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

SOT-227

For technical questions within your region, please contact one of the following:

10 V

(BR)DSS

= 25

Modules - MOSFET

SOT-227

, T

0.13

, I

500 V

38 A

Power MOSFET, 38 A

= 38 A (see fig. 12)

150 °C

SYMBOL

dV/dt

, T

ISO

(1)

Stg

(2)

(1)

(3)

M4 screw

TEST CONDITIONS

= 25 °C

= 100 °C

= 25 °C

FEATURES

• Fully isolated package

• Easy to use and parallel

• Low on-resistance

• Dynamic dV/dt rating

• Fully avalanche rated

• Simple drive requirements

• Low drain to case capacitance

• Low internal inductance

• UL pending

• Compliant to RoHS directive 2002/95/EC

• Designed for industrial level

DESCRIPTION

Third Generation Power MOSFETs from Vishay HPP provide

the designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The SOT-227 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 500 W. The low thermal resistance

of the SOT-227 contribute to its wide acceptance

throughout the industry.

DiodesEurope@vishay.com

device

Vishay Semiconductors

- 55 to + 150

design,

MAX.

± 20

150

500

580

4.0

2.5

1.3

FA38SA50LCP

low

on-resistance

www.vishay.com

UNITS

W/°C

V/ns

°C

and

Related parts for VS-FA38SA50LCP

VS-FA38SA50LCP Summary of contents

Page 1

... ( ( ( (3) dV/ Stg V ISO M4 screw , (see fig. 12 150 °C J DiodesEurope@vishay.com FA38SA50LCP Vishay Semiconductors device design, low on-resistance MAX. UNITS 150 500 W 4.0 W/°C ± 580 V/ 150 °C 2 ...

Page 2

... FA38SA50LCP Vishay Semiconductors THERMAL RESISTANCE PARAMETER Junction to case Case to sink, flat, greased surface ELECTRICAL CHARACTERISTCS (T PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance Drain to source leakage current Gate to source forward leakage ...

Page 3

... Document Number: 94547 For technical questions within your region, please contact one of the following: Revision: 11-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Power MOSFET Fig Normalized On-Resistance vs. Temperature 16000 14000 12000 10000 8000 6000 4000 2000 ° 100 7 8 FA38SA50LCP Vishay Semiconductors 3 ...

Page 4

... FA38SA50LCP Vishay Semiconductors 1000 100 T = 150 C ° ° 0.1 0.2 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) SD Fig Typical Source Drain Diode Forward Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 ° ° 150 C J Single Pulse 100 V , Drain-to-Source Voltage (V) DS Fig ...

Page 5

... 1200 TOP 1000 BOTTOM 800 600 400 200 100 125 Starting T , Junction Temperature ( C) J Fig Maximum Avalanche Energy vs. Drain Current FA38SA50LCP Vishay Semiconductors Notes: 1. Duty factor Peak thJC C 0.1 ...

Page 6

... FA38SA50LCP Vishay Semiconductors 1 Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent * V www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Power MOSFET Circuit layout considerations D.U.T. • Low stray inductance • Ground plane 3 • Low leakage inductance ...

Page 7

... Generation 3, MOSFET silicon, DBC construction - Current rating ( Single switch (see Circuit Configuration table) - SOT-227 - Voltage rating (50 = 500 V) - Low charge - P = Lead (Pb)-free CIRCUIT S G (2) LINKS TO RELATED DOCUMENTS DiodesEurope@vishay.com FA38SA50LCP Vishay Semiconductors CIRCUIT DRAWING Lead assignment D ( (1-4) www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com 3 ...

Page 8

... Revision: 28-Aug-07 SOT-227 38.30 (1.508) 37.80 (1.488) Chamfer nuts 2.00 (0.079) x 45° -A- 3 25.70 (1.012) 6.25 (0.246) 25.20 (0.992) - full 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 0.25 (0.010) M 8.10 (0.319 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) -C- 0.12 (0.005) For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 12.30 (0.484) 11.80 (0.464) www.vishay.com 1 ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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