VS-FA38SA50LCP Vishay Semiconductors, VS-FA38SA50LCP Datasheet - Page 2

• Manufacturer Part Number: VS-FA38SA50LCP
• Description: MOSFET N-Chan 500V 38 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-FA38SA50LCP

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.13 Ohms
• Configuration: Single Dual Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-227
• Fall Time: 330 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 W
• Rise Time: 340 ns
• Factory Pack Quantity: 180
• Typical Turn-off Delay Time: 200 ns

FA38SA50LCP
Vishay Semiconductors
Note
(1)
Notes
(1)
(2)
www.vishay.com
2
THERMAL RESISTANCE
PARAMETER
Junction to case
Case to sink, flat, greased surface
ELECTRICAL CHARACTERISTCS (T
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Static drain to source on-resistance
Gate threshold voltage
Forward transconductance
Drain to source leakage current
Gate to source forward leakage
Gate to source reverse leakage
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
Continuous source current
(body diode)
Pulsed source current (body diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Forward turn-on time
Pulse width
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width
300 μs, duty cycle
300 μs, duty cycle
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2 %
2 %
SYMBOL
V
I
SM
SD
V
Q
t
SYMBOL
I
t
R
on
SYMBOL
S
rr
V
(BR)DSS
rr
DS(on)
V
(1)
(2)
(BR)DSS
R
R
t
t
C
I
I
Q
C
C
GS(th)
Q
d(on)
d(off)
g
DSS
GSS
Q
L
thJC
thCS
t
t
oss
J
rss
gd
iss
fs
gs
r
f
S
g
Power MOSFET, 38 A
= 25 °C unless otherwise noted)
/ T
(1)
J
MOSFET symbol
showing the integral reverse
p-n junction diode.
T
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
J
= 25 °C, I
= 25 °C, I
V
Reference to 25 °C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead, and center of die
contact
V
V
f = 1.0 MHz, see fig. 5
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
g
D
= 38 A
= 38 A
= 10
= 8 , see fig. 10
= 0 V, I
= 10 V, I
= V
= 25 V, I
= 500 V, V
= 400 V, V
= 20 V
= - 20 V
= 400 V
= 10 V; see fig. 6 and 13
= 250 V
= 0 V
= 25 V
TEST CONDITIONS
GS
S
F
TEST CONDITIONS
= 38 A, V
, I
= 38 A; dI/dt = 100 A/μs
TYP.
0.05
D
D
D
D
-
= 1.0 mA
= 250 μA
= 23 A
= 23 A
GS
GS
= 0 V
= 0 V, T
GS
D
(1)
= 0 V
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= 1 mA
J
= 125 °C
G
(1)
(2)
S
D
MAX.
0.25
-
MIN.
MIN.
500
2.0
22
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
6900
1600
TYP.
0.66
830
Document Number: 94547
280
150
340
200
330
580
5.0
15
37
42
-
-
-
-
-
-
-
-
-
-
-
S
+ L
Revision: 11-May-10
D
MAX.
MAX.
- 200
1300
0.13
)
150
500
200
420
220
1.3
4.0
38
22
50
55
UNITS
-
-
-
-
-
-
-
-
-
-
-
°C/W
UNITS
UNITS
V/°C
nC
nH
μC
μA
nA
pF
ns
ns
S
A
V
V
V