IPB072N15N3GE818XT Infineon Technologies, IPB072N15N3GE818XT Datasheet - Page 6

• Manufacturer Part Number: IPB072N15N3GE818XT
• Description: MOSFET OptiMOS 3 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB072N15N3GE818XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 7.2 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 14 ns
• Gate Charge Qg: 70 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 35 ns
• Typical Turn-off Delay Time: 46 ns
• Part # Aliases: E8187 G IPB072N15N3 IPB072N15N3GE8187ATMA1

9 Drain-source on-state resistance
R
11 Typ. capacitances
C
V
20
15
10
10
10
10
10
5
0
4
3
2
1
-60
0
T
V
I
-20
20
f
20
V
40
V
T
DS
j
60
[°C]
[V]
60
100
80
140
100
180
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
V
3.5
2.5
1.5
0.5
10
10
10
10
4
3
2
1
0
3
2
1
0
-60
T
0
I
T
V
IPB072N15N3 G
-20
V
0.5
20
V
T
j
SD
60
[°C]
1
[V]
IPP075N15N3 G
100
IPI075N15N3 G
1.5
140
180
2