BUK9609-40B /T3 NXP Semiconductors, BUK9609-40B /T3 Datasheet - Page 11

• Manufacturer Part Number: BUK9609-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 95 A
• Resistance Drain-source Rds (on): 0.007 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 89 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 157 W
• Rise Time: 106 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 108 ns
• Part # Aliases: BUK9609-40B,118

NXP Semiconductors
8. Revision history
Table 7.
BUK9609-40B
Product data sheet
Document ID
BUK9609-40B v.2
Modifications:
BUK95_9609_40B-01
Revision history
Release date
20100607
20030415
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9609-40B separated from data sheet BUK95_9609_40B-01.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data
Product data sheet
Rev. 02 — 7 June 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9609-40B
-
Supersedes
BUK95_9609_40B-01
© NXP B.V. 2010. All rights reserved.
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