BUK9609-55A,118 NXP Semiconductors, BUK9609-55A,118 Datasheet
BUK9609-55A,118
Specifications of BUK9609-55A,118
BUK9609-55A /T3
BUK9609-55A /T3
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BUK9609-55A,118 Summary of contents
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... Rev. 01 — 21 February 2002 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Logic level compatible. ...
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Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...
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Philips Semiconductors 120 P der (%) 100 P tot ---------------------- - P = 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature Limit ...
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Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base R thermal resistance from junction to ambient vertical in still air; SOT78 package th(j-a) 7.1 Transient thermal impedance 1 - ...
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Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...
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Philips Semiconductors Table 5: Characteristics …continued unless otherwise specified. j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 300 4.8 4.6 ...
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Philips Semiconductors 2.5 V GS(th) max (V) 2 typ 1.5 min 1 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. 100 g ...
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Philips Semiconductors 120 ° 175 Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig ...
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Philips Semiconductors 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...
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Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...
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Philips Semiconductors 10. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. 9397 750 09229 Product data 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 solder lands ...
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Philips Semiconductors 11. Revision history Table 6: Revision history Rev Date CPCN Description 01 20020221 - Product data; initial version. 9397 750 09229 Product data BUK95/9609-55A Rev. 01 — 21 February 2002 TrenchMOS™ logic level FET © Koninklijke Philips Electronics ...
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Philips Semiconductors Philips Semiconductors 12. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualification Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] ...
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Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...