VN10KN3-P013-G Supertex, VN10KN3-P013-G Datasheet - Page 3

• Manufacturer Part Number: VN10KN3-P013-G
• Description: MOSFET 60V 5Ohm
• Manufacturer: Supertex

Specifications of VN10KN3-P013-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.31 A
• Resistance Drain-source Rds (on): 5 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Factory Pack Quantity: 2000

Typical Performance Curves
V
0.01
GS
250
200
150
100
1.0
0.8
0.6
0.4
0.2
1.0
0.1
Supertex inc.
10
50
0
0
= 10V
0
1.0
0
TO-92 (DC)
Maximum Rated Safe Operating Area
Transconductance vs. Drain Current
200
10
8V
Output Characteristics
10
20
400
V
V
I
DS
DS
D
(mA)
(volts)
(volts)
600
30
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
7V
6V
5V
4V
3V
2V
T
Duty Cycle,
C
300µs, 2%
Pulse Test
= 25
V
800
40
DS
= 10V
O
C
1000
1000
50
3
5.0
2.0
1.0
1.0
0.8
0.6
0.4
0.2
5.0
10
15
10
0
0
0
0
Power Dissipation vs. Case Temperature
0
0
0
TO-92
Tel: [phone]
25
Saturation Characteristics
2.0
10
8V
Switching Waveform
9V
50
V
GS
t – Time (ns)
4.0
20
= 10V
V
DS
T
C
(volts)
75
(
O
www.supertex.com
C)
30
6.0
100
7V
6V
5V
4V
3V
2V
8.0
40
125
150
VN10K
50
10