VN10KN3-P013-G Supertex, VN10KN3-P013-G Datasheet - Page 4

• Manufacturer Part Number: VN10KN3-P013-G
• Description: MOSFET 60V 5Ohm
• Manufacturer: Supertex

Specifications of VN10KN3-P013-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.31 A
• Resistance Drain-source Rds (on): 5 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Factory Pack Quantity: 2000

Typical Performance Curves
Supertex inc.
1.1
1.0
0.9
1.0
0.8
0.6
0.4
0.2
50
40
30
20
10
Capacitance vs. Drain-to-Source Voltage
0
-50
0
0
0
BV
Duty Cycle,
DSS
300µs, 2%
Pulse Test
V
2.0
10
Transfer Characteristics
DS
Variation with Temperature
= 10V
0
4.0
20
V
V
GS
DS
T
j
(volts)
(volts)
50
(
O
C)
6.0
30
1235 Bordeaux Drive, Sunnyvale, CA 94089
C
C
RSS
ISS
100
8.0
(cont.)
40
150
10
50
4
0.01
100
250
200
150
100
Transconductance vs Gate-Source Voltage
1.0
0.1
1.0
On-Resistance vs. Gate-to-Source Voltage
10
50
0.01
0
1.0
0
Output Conductance vs Drain Current
V
80µs, 1%
Duty Cycle,
Pulse Test
DS
Tel: [phone]
= 25V
V
3000µs, 2%
Duty Cycle
Pulse Test
DS
2.0
= 10V
I
4.0
D
V
V
(amperes)
GS
GS
10
0.1
(volts)
(volts)
Reduction
Due to
Heating
6.0
www.supertex.com
V
8.0
DS
= 0.1V
100
1.0
10
VN10K