SUB70N03-09BP-E3 Vishay/Siliconix, SUB70N03-09BP-E3 Datasheet - Page 2

• Manufacturer Part Number: SUB70N03-09BP-E3
• Description: MOSFET 30V 70A 93W
• Manufacturer: Vishay/Siliconix

Specifications of SUB70N03-09BP-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 9 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 93 W
• Rise Time: 8 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 ns

SUP/SUB70N03-09BP
Vishay Siliconix
Notes:
a.
b.
c.
www.vishay.com
2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
Parameter
a
c
c
c
c
c
a
a
a
Symbol
V
V
r
(BR)DSS
I
DS(on)
t
t
I
I
C
GS(th)
C
V
D(on)
C
Q
Q
d(on)
d(off)
GSS
I
DSS
DSS
Q
g
R
SM
I
t
oss
t
t
SD
iss
rss
S
rr
fs
gs
gd
r
f
g
g
_
New Product
C
= 25_C)
I
V
V
V
V
D
D
V
DS
DS
V
GS
GS
] 70 A, V
GS
DS
DS
= 24 V, V
= 24 V, V
I
= 10 V, I
= 10 V, I
V
V
F
V
V
= 0 V, V
V
V
V
= 15 V, V
V
DS
V
V
DS
DD
DD
= 70 A, di/dt = 100 A/ms
Test Condition
DS
DS
I
GS
GS
GS
DS
F
b
= V
= 70 A, V
= 0 V, V
= 15 V, R
= 15 V, R
= 24 V, V
= 5 V, V
= 4.5 V, I
= 0 V, I
= 15 V, I
= 10 V, I
GEN
GEN
GS
D
D
DS
GS
GS
GS
GS
= 30 A, T
= 30 A, T
, I
= 25 V, f = 1 MHz
= 10 V, R
= 0 V, T
= 0 V, T
GS
DS
D
= 5 V, I
GS
GS
D
D
L
L
= 250 mA
D
GS
= 250 mA
= 0.21 W
= 0.21 W
= "20 V
= 30 A
= 30 A
= 20 A
= 10 V
= 0 V
= 0 V
J
J
J
J
D
D
G
G
= 125_C
= 175_C
= 125_C
= 175_C
= 70 A
= 2.5 W
Min
0.8
30
70
20
S-20102—Rev. B, 11-Mar-02
0.007
0.010
Typ
1500
15.5
530
240
1.1
45
10
25
30
Document Number: 71229
5
6
8
9
2
0.0135
Max
"100
0.009
0.017
0.013
150
200
2.0
1.5
50
19
18
15
45
16
70
60
1
Unit
nA
mA
m
pF
nC
ns
ns
W
W
W
V
A
S
A
V