BSS192 /T3 NXP Semiconductors, BSS192 /T3 Datasheet - Page 12

• Manufacturer Part Number: BSS192 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BSS192 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Fall Time: 18 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1000 mW
• Rise Time: 18 ns
• Factory Pack Quantity: 4000
• Part # Aliases: BSS192,135

Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
For sales offices addresses send e-mail to: [e-mail].
Printed in The Netherlands
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
613510/03/pp
12
Date of release:
2002 May 22
Fax: [phone]
Document order number:
9397 750 09633
SCA74