VN2460N3-P002-G Supertex, VN2460N3-P002-G Datasheet

VN2460N3-P002-G

Manufacturer Part Number

VN2460N3-P002-G

Description

MOSFET 600V 20Ohm

Manufacturer

Supertex

Datasheet

1.VN2460N3-P002-G.pdf (6 pages)

Specifications of VN2460N3-P002-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.2 A

Resistance Drain-source Rds (on)

20 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Typical Turn-off Delay Time

25 ns

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Absolute Maximum Ratings

Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature

Distance of 1.6mm from case for 10 seconds.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

VN2460

memories, displays, bipolar transistors, etc.)

Device

ISS

and fast switching speeds

VN2460N3-G

TO-92

●

N-Channel Enhancement-Mode

Vertical DMOS FETs

Package Options

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55°C to +150°C

+300°C

VN2460N8-G

TO-243AA

Value

±20V

(SOT-89)

DGS

DSS

General Description

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device with

the power handling capabilities of bipolar transistors and with

the high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Pin Conﬁgurations

Product Marking

Package may or may not include the following marks: Si or

SOURCE

TO-92 (N3)

●

Y Y W W

2 4 6 0

VN4FW

SiVN

Tel: 408-222-8888

DSS

600

DRAIN

(V)

TO-243AA (SOT-89) (N8)

/BV

GATE

YY = Year Sealed

WW = Week Sealed

DGS

W = Code for week sealed

TO-92 (N3)

= “Green” Packaging

●

www.supertex.com

TO-243AA (SOT-89) (N8)

(max)

DS(ON)

(Ω)

DRAIN

GATE

VN2460

DRAIN

(min)

(mA)

250

SOURCE

D(ON)

Related parts for VN2460N3-P002-G

VN2460N3-P002-G Summary of contents

Page 1

... Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Device TO-92 VN2460 VN2460N3-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature ...

Page 2

... V = 25V 250mA 25Ω GEN - PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com VN2460 I † DRM (mA) 500 600 = 2.0mA 2.0mA 2.0mA 125 25V DS = 100mA D = 100mA D = 100mA D = 100mA D = 400mA SD DD ...

Page 3

... VGS = 10V 0.4 0.3 0.2 0 (Volts) Power Dissipation vs. Temperature 2.0 SOT-89 1.6 1.2 TO-92 0.8 0 100 125 Thermal Response Characteristics 1.0 SOT- 1. 0.8 C 0.6 0.4 0.2 TO- 0.001 0.01 0.1 1.0 t (seconds) p ● Tel: 408-222-8888 ● www.supertex.com VN2460 150 ...

Page 4

... On Resistance vs. Drain Current 50 VGS = 4. VGS = 10V 0.2 0.4 0.6 0 (Amperes) V GS(TH) and R DS(ON) w/ Temperature 1.6 1.4 1.2 V GS(th) @ 2mA 1.0 0.8 R DS(on) @ 10V, 0.1A 0.6 0.4 -50 - 100 125 ° Gate Drive Dynamic Characteristics 0. =10V =40V 1.0 2.0 3.0 4.0 Q (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com VN2460 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 150 5.0 ...

Page 5

... NOM - (inches) MAX .210 JEDEC Registration TO-92. * This dimension is not speciﬁed in the original JEDEC drawing. The value listed is for reference only. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408 Front View ...

Page 6

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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