VN2460N3-P002-G Supertex, VN2460N3-P002-G Datasheet - Page 2

• Manufacturer Part Number: VN2460N3-P002-G
• Description: MOSFET 600V 20Ohm
• Manufacturer: Supertex

Specifications of VN2460N3-P002-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Resistance Drain-source Rds (on): 20 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 25 ns

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
ΔV
R
BV
V
†
‡
Sym
t
I
C
1.
2.
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
DSS
OUTPUT
DS(ON)
OSS
GS(th)
RSS
t
t
TO-243AA
ISS
SD
FS
r
f
DSS
Package
I
Mounted on FR5 board, 25mm x 25mm x 1.57mm.
INPUT
D
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
TO-92
(continuous) is limited by max rated T
V
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage current
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
10V
0V
DD
0V
10%
t
(continuous)
GS(th)
d(ON)
DS(ON)
10%
t
(ON)
(mA)
160
200
90%
with temperature
I
D
with temperature
t
r
●
*
1235 Bordeaux Drive, Sunnyvale, CA 94089
J
,
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
(T
A
90%
t
(pulsed)
= 25°C unless otherwise specified)
d(OFF)
(mA)
t
500
600
(OFF)
I
D
t
90%
F
10%
Power Dissipation
@T
2
0.25
Min
600
1.5
A
0.74
1.6
50
(W)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
= 25
‡
O
C
Typ
GENERATOR
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
●
PULSE
Tel: [phone]
INPUT
R
Max
(
-5.5
100
150
GEN
O
4.0
1.0
1.7
1.5
125
10
25
20
50
25
10
10
25
20
C/W)
θ
15
-
-
-
jc
mV/
mmho
Units
%/
mA
nA
µA
pF
ns
Ω
V
V
A
V
(
O
●
O
170
O
78
C
C/W)
θ
C
www.supertex.com
ja
‡
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
D
GS
GS
GS
GS
GS
DS
DS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GEN
= 250mA,
= 0V, I
= V
= V
= ±20V, V
= 0V,
= Max Rating
= 0.8 Max Rating,
= 0V, T
= 10V, V
= 4.5V, I
= 10V, I
= 10V, I
= 25V, I
= 0V,
= 25V,
= 25V,
= 0V, I
= 25Ω
(mA)
160
200
I
V
DR
DS
DS
DD
†
, I
, I
R
D
SD
L
A
D
D
D
D
D
= 2.0mA
= 125
D
VN2460
DS
D.U.T.
= 2.0mA
= 2.0mA
= 400mA
= 100mA
= 100mA
= 100mA
DS
= 100mA
OUTPUT
= 25V
= 0V
(mA)
500
600
I
O
DRM
C