VS-VSKTF180-12HJP Vishay Semiconductors, VS-VSKTF180-12HJP Datasheet - Page 2
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VS-VSKTF180-12HJP
Manufacturer Part Number
VS-VSKTF180-12HJP
Description
SCR Modules 180 Amp 1200 Volt 400 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-VSKTF180-12HKP.pdf
(11 pages)
Specifications of VS-VSKTF180-12HJP
Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
400 A
Non Repetitive On-state Current
7130 A
Breakover Current Ibo Max
7470 A
Rated Repetitive Off-state Voltage Vdrm
1.2 kV
Off-state Leakage Current @ Vdrm Idrm
50 mA
On-state Voltage
1.84 V
Holding Current (ih Max)
600 mA
Gate Trigger Voltage (vgt)
3 V
Gate Trigger Current (igt)
200 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
MAGN-A-PAK
Circuit Type
Thyristors / Thyristors
Current Rating
180 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
2
VSK.F180..P Series
Vishay Semiconductors
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
2500 Hz
5000 Hz
10 000 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dl/dt
Case temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Typical latching current
2
2
t for fusing
t for fusing
r
d
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Fast Thyristor/Diode and Thyristor/Thyristor
SYMBOL
370
435
290
240
170
I
V
V
85
T(RMS)
I
I
(MAGN-A-PAK Power Modules), 180 A
V
I
T(TO)1
T(TO)2
T(AV)
TSM
I
2
r
r
I
I
2
TM
180° el
t1
t2
H
t
L
80 % V
t
10/0.47
50
50
DRM
180° conduction, half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
I
T
T
pk
J
J
= 25 °C, I
= 25 °C, V
= 600 A, T
530
650
430
345
270
60
I
TM
T(AV)
T(AV)
), T
), T
T
A
J
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= 12 V, Ra = 6 , I
= T
J
J
TEST CONDITIONS
= T
= T
565
670
490
390
290
85
J
< I < x I
< I < x I
maximum, t
J
J
80 % V
180° el
maximum
maximum
RRM
RRM
10/0.47
50
-
DiodesEurope@vishay.com
T(AV)
T(AV)
DRM
1000
Sinusoidal half wave,
initial T
p
800
720
540
390
), T
), T
I
60
TM
= 10 ms sine pulse
g
= 1A
J
J
= T
= T
J
= T
J
J
maximum
maximum
J
maximum
2400
1540
610
390
85
-
80 % V
100 µs
10/0.47
50
-
DRM
Document Number: 93685
VALUES
7130
7470
6000
6280
2550
1000
3150
2050
1.30
1.38
0.90
0.71
1.84
180
400
255
232
180
164
600
I
830
540
85
60
TM
-
Revision: 19-Jul-10
UNITS
UNITS
kA
/μF
A/μs
kA
m
mA
°C
°C
A
V
A
A
V
V
2
2
s
s