VS-VSKTF180-12HJP Vishay Semiconductors, VS-VSKTF180-12HJP Datasheet - Page 7
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VS-VSKTF180-12HJP
Manufacturer Part Number
VS-VSKTF180-12HJP
Description
SCR Modules 180 Amp 1200 Volt 400 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-VSKTF180-12HKP.pdf
(11 pages)
Specifications of VS-VSKTF180-12HJP
Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
400 A
Non Repetitive On-state Current
7130 A
Breakover Current Ibo Max
7470 A
Rated Repetitive Off-state Voltage Vdrm
1.2 kV
Off-state Leakage Current @ Vdrm Idrm
50 mA
On-state Voltage
1.84 V
Holding Current (ih Max)
600 mA
Gate Trigger Voltage (vgt)
3 V
Gate Trigger Current (igt)
200 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
MAGN-A-PAK
Circuit Type
Thyristors / Thyristors
Current Rating
180 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
2
Document Number: 93685
Revision: 19-Jul-10
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tp
VSK.F 180.. Series
Sinuso id a l p ulse
0 .0 5
0 .1
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DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Pulse Base w id th (μs)
For technical questions within your region, please contact one of the following:
Fast Thyristor/Diode and Thyristor/Thyristor
0 .2 5
100
0.1
10
1
. 0
(MAGN-A-PAK Power Modules), 180 A
0 .5
1 0
a ) R eco m m en ded lo a d lin e fo r
Recta n g u lar g a te p u lse
b ) Reco m m en d ed lo a d line fo r
V G D
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
1
<= 3 0% ra ted d i/d t : 1 0V , 20 o h m s
ra ted d i/d t : 1 0V , 1 0o hm s
2 .5
IG D
5
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10 jou les p er p u lse
0
1 .
Fig. 15 - Gate Characteristics
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(b )
Instantaneo us G ate C urre nt (A)
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VSK.F180.. Serie s
(a )
1
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Fre que ncy Lim ite d by PG (AV)
DiodesEurope@vishay.com
(1) PG M = 8W , tp = 25m s
(2) PG M = 20W , tp = 1m s
(3) PG M = 40W , tp = 5m s
(4) PG M = 80W , tp = 2.5m s
tp
(1)
0 1
Tra p ezo id a l p ulse
d i/d t 50A /μs
VSK.F180.. Series
0 .0 5
0 .1
1E2
(2)
Pulse Ba se w idth (μs)
Vishay Semiconductors
VSK.F180..P Series
0 .25
(3)
0 .5
1
(4)
1
2 .5
0 0
5
1E3
10 jou les p er p ulse
www.vishay.com
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