BSS192 T/R NXP Semiconductors, BSS192 T/R Datasheet - Page 4

• Manufacturer Part Number: BSS192 T/R
• Description: MOSFET TAPE-7 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSS192 T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Fall Time: 12 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1000 mW
• Rise Time: 12 ns
• Factory Pack Quantity: 1000
• Part # Aliases: BSS192,115

Philips Semiconductors
2002 May 22
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
1.2
0.8
0.4
0
0
10 V
0 V
Fig.2 Switching times test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB689
T amb ( C)
MLC697
200
4
handbook, halfpage
handbook, halfpage
V
(1) C
(2) C
(3) C
Fig.5
GS
INPUT
OUTPUT
(pF)
160
120
C
= 0; T
80
40
0
iss
oss
rss
0
.
.
.
Capacitance as a function of drain-source
voltage; typical values.
j
Fig.3 Input and output waveforms.
= 25 C; f = 1 MHz.
5
10 %
t on
90 %
10
(1)
(2)
(3)
90 %
15
Product specification
t off
20
V DS (V)
BSS192
MDA180
MBB690
10 %
25