BUK9675-100A /T3 NXP Semiconductors, BUK9675-100A /T3 Datasheet - Page 3

• Manufacturer Part Number: BUK9675-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9675-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 23 A
• Resistance Drain-source Rds (on): 0.072 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 57 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 98 W
• Rise Time: 120 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 58 ns
• Part # Aliases: BUK9675-100A,118

NXP Semiconductors
BUK9675-100A
Product data sheet
Fig 1.
Fig 3.
P
(%)
der
I
(A)
100
10
DM
10
80
60
40
20
10
0
1
3
2
function of mounting base temperature
currents as a function of drain-source voltage
Normalized total power dissipation as a
T
Safe operating area; continuous and peak drain
0
1
mb
R
DS(on)
= 25 °C; I
= V
50
DS
10
/ I
DM
D.C.
D
is single pulse
100
10
tp = 1 μs
10 μs
100 μs
1 ms
10 ms
2
150
V
All information provided in this document is subject to legal disclaimers.
DS
T
mb
003aaf170
003aaf172
(V)
(°C)
200
10
Rev. 04 — 19 April 2011
3
Fig 2.
Fig 4.
(%)
I
I
AV
D
100
10
80
60
40
20
10
0
1
2
10
function of mounting base temperature
current as a function of avalanche period
V
Normalized continuous drain current as a
unclamped inductive load
Single-shot avalanche rating; avalanche
0
−3
GS
T
j
prior to avalanche = 150 °C
≥ 5 V
N-channel TrenchMOS logic level FET
10
50
−2
BUK9675-100A
10
100
−1
150
1
© NXP B.V. 2011. All rights reserved.
T
t
AV
mb
003aaf171
003aaf188
25 °C
(ms)
(°C)
200
10
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