SUM110N04-02L-E3 Vishay/Siliconix, SUM110N04-02L-E3 Datasheet

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SUM110N04-02L-E3

Manufacturer Part Number
SUM110N04-02L-E3
Description
MOSFET 40V 110A 437.5W 2.3mohm @ 10V
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SUM110N04-02L-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Resistance Drain-source Rds (on)
2.3 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Fall Time
120 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
3.75 W
Rise Time
80 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
155 ns
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70763
S-80108-Rev. D, 21-Jan-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
V
(BR)DSS
40
Ordering Information: SUM110N04-02L
(V)
0.0038 at V
0.0023 at V
G
Top View
TO-263
D
SUM110N04-02L-E3 (Lead (Pb)-free)
J
b
r
b
N-Channel 40-V (D-S) 175 °C MOSFET
DS(on)
= 175 °C)
S
GS
GS
(Ω)
= 4.5 V
= 10 V
C
= 25 °C, unless otherwise noted
T
PCB Mount
I
L = 0.1 mH
T
T
T
110
D
C
C
C
A
(A)
= 125 °C
= 25 °C
= 25 °C
= 25 °C
a
d
FEATURES
• TrenchFET
• New Package with Low Thermal Resistance
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
G
DM
I
AR
thJA
thJC
GS
DS
AR
D
D
®
stg
N-Channel MOSFET
Power MOSFET
D
S
- 55 to 175
SUM110N04-02L
437.5
Limit
Limit
± 20
110
110
3.75
440
280
0.4
40
75
40
a
a
c
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
1

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SUM110N04-02L-E3 Summary of contents

Page 1

... 0.0038 4 TO-263 Top View Ordering Information: SUM110N04-02L SUM110N04-02L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy b Maximum Power Dissipation ...

Page 2

... SUM110N04-02L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Document Number: 70763 S-80108-Rev. D, 21-Jan- 0.004 ° °C 0.003 125 °C 0.002 0.001 0.000 80 100 120 SUM110N04-02L Vishay Siliconix 250 200 150 100 T = 125 ° ° – Gate-to-Source Voltage ( Transfer Characteristics ...

Page 4

... SUM110N04-02L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.6 1.2 0.8 0.4 0 – Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 75 100 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70763. Document Number: 70763 S-80108-Rev. D, 21-Jan-08 1000 100 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N04-02L Vishay Siliconix 100 Limited by r DS(on °C C Single Pulse 0.1 0 – ...

Page 6

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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