SUM110N04-02L-E3 Vishay/Siliconix, SUM110N04-02L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM110N04-02L-E3
• Description: MOSFET 40V 110A 437.5W 2.3mohm @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SUM110N04-02L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 2.3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 120 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 80 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 155 ns

SUM110N04-02L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
100
2.0
1.6
1.2
0.8
0.4
0.0
0.00001
0.1
10
1
- 50 - 25
On-Resistance vs. Junction Temperature
I
V
I
AV
D
GS
= 30 A
0.0001
(A) at T
= 10 V
Avalanche Current vs. Time
0
T
J
A
– Junction Temperature (°C)
25
= 150 °C
0.001
50
t
in
(s)
I
AV
75
0.01
(A) at T
100
A
= 25 °C
125
0.1
150
175
1
100
60
55
50
45
40
10
- 50
1
0
- 25
I
Source-Drain Diode Forward Voltage
D
= 10 mA
V
0
T
SD
T
J
vs. Junction Temperature
Drain Source Breakdown
J
0.3
= 150 °C
– Source-to-Drain Voltage (V)
– Junction Temperature (°C)
25
50
0.6
S-80108-Rev. D, 21-Jan-08
Document Number: 70763
75
100
T
J
125
= 25 °C
0.9
150
175
1.2