AT49BV322D-70TU Atmel, AT49BV322D-70TU Datasheet

IC FLASH 32MBIT 70NS 48TSOP

AT49BV322D-70TU

Manufacturer Part Number
AT49BV322D-70TU
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
Atmel
Datasheets

Specifications of AT49BV322D-70TU

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (2M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.65 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Capacitance, Input
4 pF
Capacitance, Output
8 pF
Current, Input, Leakage
2 μA
Current, Operating
25 mA
Current, Output, Leakage
2
Density
32M
Organization
4M×8/2M×16
Package Type
TSOP
Temperature, Operating
-40 to +85 °C
Time, Access
70 ns
Time, Address Hold
25
Voltage, Input, High
2 V
Voltage, Input, Low
0.6 V
Voltage, Output, High
2.5 V
Voltage, Output, Low
0.2 V
Voltage, Supply
2.65 to 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT49BV322D-70TU
Manufacturer:
ATMEL
Quantity:
20 000
Features
1. Description
The AT49BV322D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152
words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on
I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec-
tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball
CBGA package. The device has CE and OE control signals to avoid any bus conten-
tion. This device can be read or reprogrammed using a single power supply, making it
ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY pin, Data Polling or by the toggle bit.
Single Voltage Read/Write Operation: 2.65V to 3.6V
Access Time – 70 ns
Sector Erase Architecture
Fast Word Program Time – 10 µs
Fast Sector Erase Time – 100 ms
Suspend/Resume Feature for Erase and Program
Low-power Operation
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection and Accelerated Program Operation
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
– Supports Reading and Programming from Any Sector by Suspending Erase
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
– 10 mA Active
– 15 µA Standby
of a Different Sector
Programming of Any Other Byte/Word
“Sector Lockdown” on page
7).
32-megabit
(2M x 16/4M x 8)
3-volt Only
Flash Memory
AT49BV322D
AT49BV322DT
Not Recommended
for New Design
Contact Atmel to discuss
the latest design in trends
and options
3582B–FLASH–11/05

Related parts for AT49BV322D-70TU

AT49BV322D-70TU Summary of contents

Page 1

... Common Flash Interface (CFI) 1. Description The AT49BV322D( 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec- tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package ...

Page 2

... If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and the I/O15 pin is used as an input for the LSB (A-1) address function. AT49BV322D(T) 2 input is below 0.4V, the program and erase ...

Page 3

... A18 NC A10 A20 A19 A11 E A0 I/O0 I/O2 I/O5 I/ I/O8 I/O10 I/O12 I/O14 G OE I/O9 I/O11 VCC I/O13 I/015/A-1 H VSS I/O1 I/O3 I/O4 I/O6 AT49BV322D(T) 48 A16 47 BYTE 46 GND 45 I/O15/A-1 44 I/O7 43 I/O14 42 I/O6 41 I/O13 40 I/O5 39 I/O12 38 I/O4 37 VCC 36 I/O11 35 I/O3 34 I/O10 33 I/O2 32 ...

Page 4

... The address locations used in the command sequences are not affected by entering the command sequences. 4.2 Read The AT49BV322D(T) is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins are asserted on the out- AT49BV322D(T) 4 ...

Page 5

... Data Polling feature or the Toggle Bit feature may be used to indicate the end of a program cycle. If the erase/program status bit is a “1”, the device was not able to verify that the erase or program operation was performed successfully. 3582B–FLASH–11/05 AT49BV322D(T) . When the sector programming lockdown feature is not SEC . ...

Page 6

... Data Polling The AT49BV322D(T) features Data Polling to indicate the end of a program cycle. If the status configuration register is set to a “00”, during a program cycle an attempted read of the last byte/word loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. During a chip or sector erase operation, an attempt to read the device will give a “ ...

Page 7

... VPP Status Bit The AT49BV322D(T) provides a status bit on I/O3, which provides information regarding the voltage level of the VPP pin. During a program or erase operation, if the voltage on the VPP pin is not high enough to perform the desired operation successfully, the I/O3 status bit will be a “1”. ...

Page 8

... Protection Register The AT49BV322D(T) contains a 128-bit register that can be used for security purposes in sys- tem design. The protection register is divided into two 64-bit blocks. The two blocks are designated as block A and block B. The data in block A is non-changeable and is programmed at the factory with a unique number ...

Page 9

... Hardware Data Protection The Hardware Data Protection feature protects against inadvertent programs to the AT49BV322D(T) in the following ways: (a) V function is inhibited. (b) V device will automatically time out 10 ms (typical) before programming. (c) Program inhibit: hold- ing any one of OE low, CE high or WE high inhibits program cycles. (d) Program inhibit: V less than V 4 ...

Page 10

... During chip erase, a valid address is any non-protected sector address. 2. I/O7 should be rechecked even if I/O5 = “1” because I/O7 may change simultaneously with I/O5. AT49BV322D(T) 10 Figure 4-2. YES Program/Erase Operation ...

Page 11

... I/O5 = “1” because the toggle bit may stop toggling as I/O5 changes to “1”. 3582B–FLASH–11/05 Figure 4- Program/Erase Operation Successful, Device in Read Mode Note: AT49BV322D(T) Toggle Bit Algorithm (Configuration Register = 01) START Read I/O7 - I/O0 Read I/O7 - I/O0 NO Toggle Bit = Toggle? YES NO ...

Page 12

... Program Suspended & Read DATA Non-programming Sector Notes: 1. I/O5 switches to a “1” when a program or an erase operation has exceeded the maximum time limits or when a program or sector erase operation is performed on a protected sector. 2. I/O3 switches to a “1” when the V AT49BV322D(T) 12 I/O7 I/O6 01 00/01 0 ...

Page 13

... C0 AA AAA 55 555 90 AA AAA 55 555 D0 98 and D , must only differ in address A0. This command should be used during IN0 IN1 ” on page 14. AT49BV322D(T) 4th Bus 5th Bus Cycle Cycle Addr Data Addr Data 555 AA AAA 555 AA AAA Addr D IN Addr0 D Addr1 ...

Page 14

... The addressing shown above should be used when the device is operating in the word (x16) mode the byte (x8) mode, A-1 should be used when addressing the protection register: with A the LSB of the address location can be accessed; and with A the MSB of the address location can be accessed AT49BV322D(T) 14 *NOTICE: + 0.6V ...

Page 15

... AT49BV322D – Sector Address Table Sector Size (Bytes/Words) SA0 8K/4K SA1 8K/4K SA2 8K/4K SA3 8K/4K SA4 8K/4K SA5 8K/4K SA6 8K/4K SA7 8K/4K SA8 64K/32K SA9 64K/32K SA10 64K/32K SA11 64K/32K SA12 64K/32K SA13 64K/32K SA14 64K/32K SA15 64K/32K SA16 ...

Page 16

... AT49BV322D – Sector Address Table (Continued) Sector Size (Bytes/Words) SA37 64K/32K SA38 64K/32K SA39 64K/32K SA40 64K/32K SA41 64K/32K SA42 64K/32K SA43 64K/32K SA44 64K/32K SA45 64K/32K SA46 64K/32K SA47 64K/32K SA48 64K/32K SA49 64K/32K SA50 64K/32K SA51 64K/32K SA52 64K/32K ...

Page 17

... AT49BV322DT – Sector Address Table Sector Size (Bytes/Words) SA0 64K/32K SA1 64K/32K SA2 64K/32K SA3 64K/32K SA4 64K/32K SA5 64K/32K SA6 64K/32K SA7 64K/32K SA8 64K/32K SA9 64K/32K SA10 64K/32K SA11 64K/32K SA12 64K/32K SA13 64K/32K SA14 64K/32K SA15 64K/32K SA16 ...

Page 18

... AT49BV322DT – Sector Address Table (Continued) Sector Size (Bytes/Words) SA37 64K/32K SA38 64K/32K SA39 64K/32K SA40 64K/32K SA41 64K/32K SA42 64K/32K SA43 64K/32K SA44 64K/32K SA45 64K/32K SA46 64K/32K SA47 64K/32K SA48 64K/32K SA49 64K/32K SA50 64K/32K SA51 64K/32K SA52 64K/32K ...

Page 19

... Cycle Waveforms” on page 4. V (min) = 1.65V IHPP 5. V (max) = 0.4V. ILPP 6. See details under “Software Product Identification Entry/Exit” 7. Manufacturer Code: 1FH (x8); 001FH (x16), Device Code: C8H (x8) - AT49BV322D; 01C8H (x16) - AT49BV322D; C9H (x8) - AT49BV322DT; 01C9H (x16) - AT49BV322DT. 3582B–FLASH–11/05 Ind. ( RESET V ...

Page 20

... Input Load Current PP1 PP V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL1 V Output Low Voltage OL2 V Output High Voltage OH1 V Output High Voltage OH2 Note the erase mode mA. CC AT49BV322D(T) 20 Condition Min I 0. MHz OUT 2 2 1.0 mA ...

Page 21

... Input Test Waveforms and Measurement Level 15. Output Test Load 16. Pin Capacitance ( MHz 25°C Symbol OUT Note: 1. This parameter is characterized and is not 100% tested. 3582B–FLASH–11/ < Typ Max AT49BV322D(T) Units Conditions OUT 21 ...

Page 22

... This parameter is characterized and is not 100% tested. AT49BV322D(T) 22 (1)(2)(3)( ADDRESS VALID ACC t RO HIGH Z OUTPUT - t after the address transition without impact on t ACC after the falling edge of CE without impact AT49BV322D(T)-70 Min Max 100 VALID . ACC after an address change CE ACC OE ...

Page 23

... Chip Select Setup Time CS t Chip Select Hold Time CH t Write Pulse Width ( Write Pulse Width High WPH t Data Setup Time Data, OE Hold Time DH OEH 20. AC Byte/Word Load Waveforms 20.1 WE Controlled 20.2 CE Controlled 3582B–FLASH–11/05 AT49BV322D(T) Min Max Units ...

Page 24

... For chip erase, the address should be 555. For sector erase, the address depends on what sector erased. (See note 3 under “Command Definition Table” on page 3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H. AT49BV322D(T) 24 PROGRAM CYCLE t ...

Page 25

... Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. 3582B–FLASH–11/05 (1) (2) 22. t OEH HIGH (1) (2) 22. (1)(2)(3) AT49BV322D(T) Min Typ Max Min Typ Max specification must be met by the toggling ...

Page 26

... Manufacturer Code: 1FH(x8); 001FH(x16) Device Code:C8 (x8) – AT49BV322D; 01C8 (x16) – AT49BV322D; C9H (x8) – AT49BV322DT; 01C9H (x16) – AT49BV322DT. Additional Device Code: 01 (x8) – AT49BV322D(T); 0001 (x16) – AT49BV322D(T) 6. Either one of the Product ID Exit commands can be used. AT49BV322D(T) 26 30. Sector Lockdown Enable ...

Page 27

... Maximum number of bytes in multiple byte write = 4 0000h Maximum number of bytes in multiple byte write = 4 0002h 2 regions 0007h 8K bytes 0000h 8K bytes 0020h 8K bytes 0000h 8K bytes 003Eh 64K bytes 0000h 64K bytes 0000h 64K bytes 256 0001h 64K bytes 256 AT49BV322D(T) 27 ...

Page 28

... AT49BV322D(T) 28 Data AT49BV322D(T) Comments VENDOR SPECIFIC EXTENDED QUERY 0050h “P” 0052h “R” 0049h “I” 0031h Major version number, ASCII 0030h Minor version number, ASCII Bit 0 – chip erase supported, 0 – no, 1 – yes Bit 1 – ...

Page 29

... Plastic Chip-Size Ball Grid Array Package (CBGA) 48T 48-lead, Plastic Thin Small Outline Package (TSOP) 3582B–FLASH–11/05 Ordering Code Package AT49BV322D-70CU 48C17 AT49BV322D-70TU AT49BV322DT-70CU 48C17 AT49BV322DT-70TU Package Type AT49BV322D(T) Operation Range Industrial 48T (-40 to 85C) Industrial 48T (-40 ...

Page 30

... CBGA A1 Ball ID D Top View 1.50 REF Bottom View 2325 Orchard Parkway San Jose, CA 95131 R AT49BV322D( Ball Corner e 2.20 REF TITLE 48C17, 48-ball ( Array), 0.80 mm Pitch, 7.0 x 10.0 x 1.0 mm Chip-scale Ball Grid Array Package (CBGA Side View COMMON DIMENSIONS ...

Page 31

... Lead coplanarity is 0.10 mm maximum. 2325 Orchard Parkway San Jose, CA 95131 R 3582B–FLASH–11/05 PIN SEATING PLANE A1 TITLE 48T, 48-lead ( Package) Plastic Thin Small Outline Package, Type I (TSOP) AT49BV322D(T) 0º ~ 8º GAGE PLANE COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX A – – ...

Page 32

... Revision History Revision No. Revision A – Sept. 2005 Revision B – Nov. 2005 AT49BV322D(T) 32 History  Initial Release  Changed the CFI values of addresses 20h & 24h in the x16 mode to 0002h and 0004h, respectively. 3582B–FLASH–11/05 ...

Page 33

... Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDI- TIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT ...

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