AT49BV322D-70TU Atmel, AT49BV322D-70TU Datasheet

IC FLASH 32MBIT 70NS 48TSOP

AT49BV322D-70TU

Manufacturer Part Number
AT49BV322D-70TU
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
Atmel
Datasheets

Specifications of AT49BV322D-70TU

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (2M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.65 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Capacitance, Input
4 pF
Capacitance, Output
8 pF
Current, Input, Leakage
2 μA
Current, Operating
25 mA
Current, Output, Leakage
2
Density
32M
Organization
4M×8/2M×16
Package Type
TSOP
Temperature, Operating
-40 to +85 °C
Time, Access
70 ns
Time, Address Hold
25
Voltage, Input, High
2 V
Voltage, Input, Low
0.6 V
Voltage, Output, High
2.5 V
Voltage, Output, Low
0.2 V
Voltage, Supply
2.65 to 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT49BV322D-70TU
Manufacturer:
ATMEL
Quantity:
20 000
Features
1. Description
The AT49BV322D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152
words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on
I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec-
tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball
CBGA package. The device has CE and OE control signals to avoid any bus conten-
tion. This device can be read or reprogrammed using a single power supply, making it
ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY pin, Data Polling or by the toggle bit.
Single Voltage Read/Write Operation: 2.65V to 3.6V
Access Time – 70 ns
Sector Erase Architecture
Fast Word Program Time – 10 µs
Fast Sector Erase Time – 100 ms
Suspend/Resume Feature for Erase and Program
Low-power Operation
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection and Accelerated Program Operation
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
– Supports Reading and Programming from Any Sector by Suspending Erase
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
– 10 mA Active
– 15 µA Standby
of a Different Sector
Programming of Any Other Byte/Word
“Sector Lockdown” on page
7).
32-megabit
(2M x 16/4M x 8)
3-volt Only
Flash Memory
AT49BV322D
AT49BV322DT

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AT49BV322D-70TU Summary of contents

Page 1

... Common Flash Interface (CFI) 1. Description The AT49BV322D( 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec- tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package ...

Page 2

... If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and the I/O15 pin is used as an input for the LSB (A-1) address function. AT49BV322D(T) 2 input is below 0.4V, the program and erase ...

Page 3

... The addressing shown above should be used when the device is operating in the word (x16) mode the byte (x8) mode, A-1 should be used when addressing the protection register: with A the LSB of the address location can be accessed; and with A the MSB of the address location can be accessed AT49BV322D(T) 14 *NOTICE: + 0.6V ...

Page 4

... Cycle Waveforms” on page 4. V (min) = 1.65V IHPP 5. V (max) = 0.4V. ILPP 6. See details under “Software Product Identification Entry/Exit” 7. Manufacturer Code: 1FH (x8); 001FH (x16), Device Code: C8H (x8) - AT49BV322D; 01C8H (x16) - AT49BV322D; C9H (x8) - AT49BV322DT; 01C9H (x16) - AT49BV322DT. Ind. ( RESET V PP ...

Page 5

... Input Load Current PP1 PP V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL1 V Output Low Voltage OL2 V Output High Voltage OH1 V Output High Voltage OH2 Note the erase mode mA. CC AT49BV322D(T) 20 Condition Min I 0. MHz OUT 2 2 1.0 mA ...

Page 6

... Input Test Waveforms and Measurement Level 15. Output Test Load 16. Pin Capacitance ( MHz 25°C Symbol OUT Note: 1. This parameter is characterized and is not 100% tested < Typ Max AT49BV322D(T) Units Conditions OUT 21 ...

Page 7

... DF 4. This parameter is characterized and is not 100% tested. AT49BV322D(T) 22 (1)(2)(3)( ADDRESS VALID ACC t RO HIGH Z OUTPUT VALID - t after the address transition without impact after the falling edge of CE without impact AT49BV322D(T)-70 Min Max Units 100 ACC after an address change CE ACC OE ...

Page 8

... Address Hold Time AH t Chip Select Setup Time CS t Chip Select Hold Time CH t Write Pulse Width ( Write Pulse Width High WPH t Data Setup Time Data, OE Hold Time DH OEH 20. AC Byte/Word Load Waveforms 20.1 WE Controlled 20.2 CE Controlled AT49BV322D(T) Min Max Units ...

Page 9

... For chip erase, the address should be 555. For sector erase, the address depends on what sector erased. (See note 3 under “Command Definition Table” on page 3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H. AT49BV322D(T) 24 Min 500 ...

Page 10

... Toggling either both OE and CE will operate toggle bit. The t input(s). 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. (1) (2) 22. t OEH DH t HIGH (1) (2) 22. (1)(2)(3) AT49BV322D(T) Min Typ Max Min Typ Max ...

Page 11

... Plastic Chip-Size Ball Grid Array Package (CBGA) 48T 48-lead, Plastic Thin Small Outline Package (TSOP) Ordering Code Package AT49BV322D-70CU 48C17 AT49BV322D-70TU AT49BV322DT-70CU 48C17 AT49BV322DT-70TU Package Type AT49BV322D(T) Operation Range Industrial 48T (-40° to 85°C) Industrial 48T (-40° ...

Page 12

... E is 0.15 mm per side and 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. 2325 Orchard Parkway San Jose, CA 95131 R PIN SEATING PLANE A1 TITLE 48T, 48-lead ( Package) Plastic Thin Small Outline Package, Type I (TSOP) AT49BV322D(T) 0º ~ 8º GAGE PLANE COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX A – – ...

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