VS-ST333C08LFM1 Vishay Semiconductors, VS-ST333C08LFM1 Datasheet - Page 5

• Manufacturer Part Number: VS-ST333C08LFM1
• Description: SCRs 720 Amp 800 Volt 1230 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST333C08LFM1

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 11500 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.96 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AC
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 3

Document Number: 93678
Revision: 15-May-08
10000
10000
12000
11000
10000
N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Maximum Non-Repetitive Surge Current
9500
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
1000
9000
8000
7000
6000
5000
4000
Fig. 9 - On-State Voltage Drop Characteristics
100
0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5 5.5 6 6.5
0.01
1
At An y Rated L oad Con dition And W ith
ST333C..C Series
O f Con duction May Not Be M ain tained.
Maxim um Non Repetitive Surge Current
Instan tan eous O n-state V oltage (V)
ST333C..C Series
Single and Double Side Cooled
Single and Double Side Cooled
Rated V
V ersus Pulse Train Duration. C ontrol
Pulse T rain Duration (s)
RR M
T = 25°C
T = 125°C
Applied Following Surge.
J
J
ST333C..C Series
No Voltage Reapplied
Rated V
0 1
0.1
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
In itial T = 125°C
For technical questions, contact: [e-mail]
Initial T = 125°C
RR M
Reapplied
J
(Hockey PUK Version), 720 A
J
Inverter Grade Thyristors
1
0 0
1
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 10 - Thermal Impedance Z
0 .0 0 1
320
300
280
260
240
220
200
180
160
140
120
100
0 .0 1
1 8 0
1 6 0
1 4 0
1 2 0
1 0 0
80
0 .1
8 0
6 0
4 0
2 0
Rate O f Fall O f O n-state Current - di/dt (A/µs)
R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A /µ s)
0 .0 0 1
10 20 30
Vishay High Power Products
1 0
S T3 3 3 C ..C Se r ie s
2 0
Sq u a re W a v e P u ls e D ur at io n (s)
3 0
0 .0 1
I
TM
I
T M
40
4 0
ST333C..C Series
= 50 0 A
= 5 00 A
3 00 A
2 00 A
10 0 A
50 A
3 00 A
20 0 A
1 00 A
50
5 0
50 A
S te a d y St a t e V a lu e
R
(S in gle Sid e C o o le d )
R
(D o u b le S id e C o o le d )
(D C O p e ra t io n )
0 . 1
thJ-h s
th J-hs
ST333C..C Series
T = 125 °C
60
6 0
J
ST 3 3 3 C ..C S e rie s
T = 1 2 5 ° C
J
70 80
7 0
thJ-hs
= 0 .0 9 K /W
= 0 .0 4 K /W
1
8 0
Characteristics
90 100
9 0 1 0 0
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1 0
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