VS-ST333C08LFM1 Vishay Semiconductors, VS-ST333C08LFM1 Datasheet - Page 7

• Manufacturer Part Number: VS-ST333C08LFM1
• Description: SCRs 720 Amp 800 Volt 1230 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST333C08LFM1

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 11500 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.96 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AC
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 3

Document Number: 93678
Revision: 15-May-08
1 E 4
1 E 3
1 E 2
1 E 1
1 E 1
tp
ST33 3C ..C Se ries
Sinuso idal pulse
1 E 2
P u lse B ase w id t h (µ s)
1 0 0
0 .1
0.2
1 0
0 .0 0 1
1
0 .3
a ) R e c o m m e n d e d lo a d lin e fo r
b ) Re c o m m e n d e d lo a d lin e f o r
0.5
Re c t a n g ula r g a t e p u lse
t r< =1 µ s
< = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s
ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s
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2
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Fig. 16 - Maximum On-State Energy Power Loss Characteristics
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1 E 3
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(Hockey PUK Version), 720 A
20 jo ule s pe r p ulse
Inverter Grade Thyristors
0 .0 1
V G D
IG D
Fig. 17 - Gate Characteristics
D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V )
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In sta n t a n e o u s G at e C u rr e n t (A )
1 E 4
0 .1
( b )
( a )
1
1 E 1
( 1 ) P G M = 1 0 W , t p = 2 0 m s
( 2 ) P G M = 2 0 W , t p = 1 0 m s
( 3 ) P G M = 4 0 W , t p = 5 m s
( 4 ) P G M = 6 0 W , t p = 3 .3 m s
t p
Vishay High Power Products
ST3 33 C Se ries
Rec tang ula r pulse
di/dt = 50A /µs
1 0
( 1 )
1 E 2
0.2
P u lse Ba se w id t h (µ s)
( 2 )
0.3
ST333C..C Series
(3 )
0.4
( 4 )
1 0 0
0 .5
1
2
3
1 E 3
5
10
2 0 jou les p er pulse
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