VS-ST223C08CFN0 Vishay Semiconductors, VS-ST223C08CFN0 Datasheet - Page 2

• Manufacturer Part Number: VS-ST223C08CFN0
• Description: SCR Modules 800 Volt 390 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST223C08CFN0

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 745 A
• Non Repetitive On-state Current: 5850 A
• Breakover Current Ibo Max: 6130 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• On-state Voltage: 1.58 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: TO-200AB (A-PUK)
• Circuit Type: SCR
• Current Rating: 390 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

ST223C..C Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate
of rise of turned on current
Typical delay time
Maximum turn-off time
2
2
t for fusing
√t for fusing
r
d
For technical questions, contact: [e-mail]
930
910
780
490
40
SYMBOL
SYMBOL
V
V
I
180° el
I
T(RMS)
I
dI/dt
T(AV)
V
T(TO)1
T(TO)2
I
(Hockey PUK Version), 390 A
TSM
I
2
r
r
I
I
t
t
47/0.22
2
TM
t1
t2
H
L
√t
d
q
t
V
Inverter Grade Thyristors
50
DRM
50
800
770
650
400
180° conduction, half sine wave
Double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
I
T
T
Resistive load, gate pulse: 10 V, 5 Ω source
T
I
V
55
TM
TM
TM
J
J
J
J
J
R
= 25 °C, I
= 25 °C, V
= T
= 25 °C, V
= T
= 50 V, t
= 600 A, T
= 300 A, commutating dI/dt = 20 A/µs
J
J
maximum, V
maximum,
T(AV)
T(AV)
p
T
), T
), T
A
DM
= 500 µs, dV/dt: See table in device code
J
> 30 A
1430
1490
1430
1070
T(AV)
T(AV)
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
= 12 V, R
40
= T
J
J
= Rated V
TEST CONDITIONS
= T
= T
TEST CONDITIONS
J
180° el
< I < π x I
< I < π x I
maximum, t
DRM
47/0.22
J
J
V
maximum
maximum
50
DRM
RRM
RRM
-
a
= Rated V
= 6 Ω, I
DRM
T(AV)
T(AV)
1220
1300
1260
I
920
, I
TM
55
Sinusoidal half wave,
initial T
p
TM
), T
), T
= 10 ms sine wave pulse
G
DRM
= 50 A DC, t
= 1 A
J
J
= T
= T
J
, I
= T
TM
J
J
maximum
maximum
J
= 2 x dI/dt
maximum
5870
3120
1880
1000
40
p
= 1 µs
100 µs
47/0.22
V
Document Number: 93672
50
DRM
-
MIN. MAX.
10
VALUES
Revision: 14-May-08
390 (150)
VALUES
5240
2740
1640
I
860
1000
TM
55 (85)
0.78
55
5850
6130
4920
5150
1710
1000
1.58
1.05
1.09
0.88
0.82
745
171
156
121
110
600
30
UNITS
UNITS
UNITS
kA
Ω/µF
A/µs
kA
A/µs
mΩ
mA
°C
°C
µs
A
V
A
A
V
2
2
√s
s