VS-ST223C08CFN0 Vishay Semiconductors, VS-ST223C08CFN0 Datasheet - Page 6

• Manufacturer Part Number: VS-ST223C08CFN0
• Description: SCR Modules 800 Volt 390 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST223C08CFN0

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 745 A
• Non Repetitive On-state Current: 5850 A
• Breakover Current Ibo Max: 6130 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• On-state Voltage: 1.58 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: TO-200AB (A-PUK)
• Circuit Type: SCR
• Current Rating: 390 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

ST223C..C Series
Vishay High Power Products
www.vishay.com
6
1 E 4
1 E 3
1 E 2
1 E 4
1 E 3
1 E 2
1 E 1
1 E 4
1 E 3
1 E 2
1 E 1
1 E 1
1 E 1
1 E 1
Snu bbe r c irc uit
R
C
V
Snubb er c ircu it
R
C
V
s
s
D
s
s
D
1 00 0 0
= 4 7 o hm s
= 0.22 µF
= 80% V
= 47 o hm s
= 80 % V
= 0 .22 µF
10 0 00
1 0 00 0
5 00 0
5 00 0
5 00 0
D RM
3 00 0
D RM
3 00 0
3 00 0
2 50 0
2 50 0
25 0 0
1 E 2
1 E 2
1 E 2
P u lse Ba se w id t h (µ s)
P u lse B ase w idt h (µ s)
P u lse B ase w id t h (µ s)
1 50 0
15 0 0
1 50 0
100 0
10 00
1 0 00
5 00
5 00
500
tp
tp
tp
For technical questions, contact: [e-mail]
4 00
4 00
1 E 3
1 E 3
400
1 E 3
ST223 C. .C Se ries
Tra pezo idal pulse
T
di/d t = 1 00A /µs
C
20 0
ST22 3C ..C Se rie s
Tra pe zoidal pulse
T
di/dt = 5 0A /µ s
ST2 23 C.. C Serie s
Sinuso idal pulse
T
2 00
C
200
Snubb er c ircuit
R
C
V
C
= 40°C
s
s
D
= 40°C
= 40°C
10 0
= 0. 22 µ F
= 80 % V
= 4 7 o hm s
10 0
(Hockey PUK Version), 390 A
1 00
Inverter Grade Thyristors
5 0 Hz
5 0 Hz
50 Hz
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
D RM
1 E 4
1 E 4
1 E 4
1 E 1
1 E 1
1 E 1
1 E 1
Snubbe r circ uit
R
C
V
Snubbe r circ uit
R
C
V
s
s
D
s
s
D
10 00 0
= 4 7 o hm s
= 80% V
= 0.2 2 µF
= 8 0 % V
= 4 7 o hm s
= 0.22 µF
1 00 00
10 00 0
5 00 0
5 00 0
5 00 0
D RM
D RM
3 000
3 00 0
3 00 0
2 50 0
2 50 0
2 50 0
1 E 2
1 E 2
1 E 2
P u lse Ba se w id t h (µ s)
P u lse Ba se w id t h (µ s)
P u lse Ba se w id t h (µ s)
1 50 0
1 50 0
1 50 0
1 00 0
1 000
10 00
50 0
5 00
5 00
tp
tp
t p
Document Number: 93672
400
400
4 00
1 E 3
1 E 3
1 E 3
ST223 C. .C Se ries
Trap ezo id al p ulse
T
di/dt = 10 0A /µs
ST2 23 C..C Series
Trape zoidal pulse
T
di/dt = 50A /µs
C
C
ST2 23 C.. C Se ries
Sinuso idal pulse
T
20 0
C
2 00
2 0 0
= 55°C
Snubbe r circ uit
R
C
V
= 55°C
Revision: 14-May-08
= 55°C
s
s
D
= 80 % V
1 0 0
= 4 7 o hm s
= 0.22 µF
100
1 00
50 Hz
50 Hz
50 Hz
D RM
1 E 4
1 E 4
1 E 4