VP3203N3-P014-G Supertex, VP3203N3-P014-G Datasheet - Page 4

• Manufacturer Part Number: VP3203N3-P014-G
• Description: MOSFET 30V 0.6Ohm
• Manufacturer: Supertex

Specifications of VP3203N3-P014-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 0.65 A
• Resistance Drain-source Rds (on): 0.6 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.74 W
• Rise Time: 15 ns
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 25 ns

Typical Performance Curves
300
225
150
1.1
1.0
0.9
-10
75
-8
-6
-4
-2
0
0
-50
-0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
-2
Transfer Characteristics
= -25V
0
Variation with Temperature
T
-10
A
= -55 °C
V
V
GS
-4
f = 1MHz
DS
T
(volts)
j
50
(°C)
(volts)
●
25°C
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
-20
100
C
-8
(cont.)
ISS
C
C
OSS
RSS
150
-10
-30
4
2.0
1.6
1.2
0.8
0.4
1.4
1.2
1.0
0.8
0.6
-10
-8
-6
-4
-2
0
0
-50
0
0
V
●
(th)
Gate Drive Dynamic Characteristics
Tel: [phone]
On-Resistance vs. Drain Current
and R
200 pF
-4
1
V
0
GS
Q
DS
R
G
= -5V
DS(ON)
I
D
Variation with Temperature
(nanocoulombs)
V
-8
(amperes)
2
DS
T
j
= -10V
50
@ -10V, -3A
(°C)
V
GS
●
-12
3
= -10V
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V
335pF
V
(th)
DS
100
@ -10mA
=
-16
4
-20V
150
-20
5
1.4
1.2
1.0
0.8
0.6
VP3203