BUK9606-75B /T3 NXP Semiconductors, BUK9606-75B /T3 Datasheet - Page 2

• Manufacturer Part Number: BUK9606-75B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-75B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 116 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 144 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 273 ns
• Part # Aliases: BUK9606-75B,118

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK9606-75B
Product data sheet
Pin
1
2
3
mb
Type number
BUK9606-75B
It is not possible to make a connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base;
connected to drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
[1]
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 July 2011
Simplified outline
SOT404 (D2PAK)
…continued
Conditions
I
R
T
V
V
see
D
j(init)
GS
DS
GS
1
= 75 A; V
mb
Figure 13
= 60 V; T
2
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
3
D
sup
= 25 A;
j
GS
= 25 °C;
≤ 75 V;
N-channel TrenchMOS logic level FET
= 5 V;
Graphic symbol
BUK9606-75B
Min
-
-
mbb076
G
Typ
-
37
© NXP B.V. 2011. All rights reserved.
D
S
Version
SOT404
Max
852
-
Unit
mJ
nC
2 of 13