BUK9606-75B /T3 NXP Semiconductors, BUK9606-75B /T3 Datasheet - Page 6

• Manufacturer Part Number: BUK9606-75B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-75B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 116 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 144 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 273 ns
• Part # Aliases: BUK9606-75B,118

NXP Semiconductors
Table 6.
BUK9606-75B
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
D
(A)
I
10
10
10
10
10
10
D
350
300
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
Characteristics
10
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
5
min
4
1
4
…continued
typ
6
V
GS
2
= 3 V
max
2.4
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
8
GS
GS
V
= 40 A; V
= 20 A; dI
DS
(V)
Figure 15
03ng84
03ng53
= -10 V; V
(V)
10
3
Rev. 4 — 20 July 2011
GS
S
/dt = -100 A/µs;
DS
= 0 V; T
= 25 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
DSon
(S)
g
j
fs
200
150
100
= 25 °C
50
8
7
6
5
4
0
of gate-source voltages; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
20
5
BUK9606-75B
Min
-
-
-
10
40
Typ
0.85
68
176
© NXP B.V. 2011. All rights reserved.
V
I
D
GS
(A)
(V)
Max
1.2
-
-
03ng83
03ng81
15
60
Unit
V
ns
nC
6 of 13